Measurement of Very Low Tunneling Current Density in Sio2 using the Floating-Gate Technique

IEEE Electron Device Letters

Volumn 12, Issue 12, 1991, Pages 713-715

  Fishbein, Bruce ^a   Krakauer, David ^a   Doyle, Brian ^a  

^a HEWLETT PACKARD COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS--MATERIALS; SEMICONDUCTING SILICON COMPOUNDS--APPLICATIONS; TRANSISTORS--MATERIALS;

FLOATING-GATE TECHNIQUE; FOWLER-NORDHEIM TUNNELING CURRENTS; MOS CAPACITORS; VERY LOW TUNNELING CURRENT DENSITY;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0026367761     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.116965     Document Type: Article

References (8)

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3. N. Saks et al., “Observation of hot-hole injection in NMOS transistors using a modified floating gate technique,” IEEE Trans. Electron Devices, vol. ED-33, p. 1529, 1986.
4. Y. Nissan-Cohen, “A novel floating-gate method for measurement of ultra-low hole and electron gate currents in MOS transistors,” IEEE Electron Device Lett., vol. EDL-7, p. 561, 1986.
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7. P. Habas and J. Fancelli, “Modeling of MOSFET's with non-degen-erately doped gates,” submitted to IEEE Trans. Electron Devices.
8. Z. Weinberg, “Tunneling of electrons from Si into thermally grown SiIO2,” Solid-State Electron., vol. 20, p. 11, 1977.