Impact of polarization relaxation on ferroelectric memory performance

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1991, Pages 61-62

  Moazzami, Reza ^a   Abt, Norman ^a   Nissan Cohen, Yoav ^a   Shepherd, William H ^a   Brassington, Michael P ^a   Hu, Chenming ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; DATA STORAGE UNITS; FERROELECTRIC DEVICES; FERROELECTRIC MATERIALS--FILMS;

DATA STORAGE, MAGNETIC;

EID: 0026366631     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)