SCOPUS 정보 검색 플랫폼

Volumn 38, Issue 3-4, 1991, Pages 265-289

New methods for qualitative and quantitative analysis of the GaAs/AlGaAs interface by high-resolution electron microscopy

(2) Thoma, S a Cerva, H a

a SIEMENS AG (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

MATHEMATICAL TECHNIQUES - ALGORITHMS; MICROSCOPES, ELECTRON - APPLICATIONS; SEMICONDUCTING GALLIUM ARSENIDE - ANALYSIS; SEMICONDUCTING INTERMETALLICS - ANALYSIS; SEMICONDUCTOR DEVICES - HETEROJUNCTIONS;

ALUMINUM GALLIUM ARSENIDE; CRYSTAL TILT; HIGH RESOLUTION ELECTRON MICROSCOPY; MICROSCOPE DEFOCUS; NONLINEAR IMAGING THEORY;

SEMICONDUCTOR MATERIALS;

ALLOY; ALUMINUM; ARSENIC; GALLIUM;

ARTICLE; ELECTRON MICROSCOPY; STRUCTURE ANALYSIS;

EID: 0026329226 PISSN: 03043991 EISSN: None Source Type: Journal
DOI: 10.1016/0304-3991(91)90161-X Document Type: Article

Times cited : (43)

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