1.55 μm Polarization-Insensitive High-Gain Tensile-Strained-Barrier MQW Optical Amplifier

IEEE Photonics Technology Letters

Volumn 3, Issue 11, 1991, Pages 998-1000

  Magari, Katsuaki ^a   Okamoto, Minoru ^a   Noguchi, Yoshio ^a  

^a Tokyo Institute of Technology   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

LIGHT--POLARIZATION; MAGNETIC FIELDS; SEMICONDUCTOR DEVICES;

MULTIPLE QUANTUM WELLS; POLARIZATION SENSITIVITY;

LASERS, SEMICONDUCTOR;

EID: 0026260061     PISSN: 10411135     EISSN: 19410174     Source Type: Journal    
DOI: 10.1109/68.97840     Document Type: Article

References (8)

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6. N. A. Olsson, “Polarization-independent configuration optical amplifier,” Electron. Lett., vol. 24, p. 1075, 1988.
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8. H. Asai and K. Oe, “Energy band-gap shift with elastic strain in Gax In, 1-x P epitaxial layers on (001) GaAs substrate,” J. Appl. Phys., vol. 54, p. 2052, 1983.