A Technique for Correction of Parasitic Capacitance on Microwave ftMeasurements of MESFET and HEMT Devices

IEEE Transactions on Microwave Theory and Techniques

Volumn 39, Issue 11, 1991, Pages 1880-1882

  Feng, Milton ^a   Lau, C L ^b   Ito, C ^b  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^b Ford Microelectronics Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC MEASUREMENTS--CAPACITANCE; INTEGRATED CIRCUITS--LAYOUT; MICROWAVE MEASUREMENTS; TRANSISTORS, FIELD EFFECT;

DEVICE LAYOUT; HEMT DEVICES; PARASITIC CAPACITANCE;

SEMICONDUCTOR DEVICES, MESFET;

EID: 0026259653     PISSN: 00189480     EISSN: 15579670     Source Type: Journal    
DOI: 10.1109/22.97490     Document Type: Article

References (2)

1. U. K. Mishra, A. S. Brown, S. E. Rosenbaum, C. E. Hooper, M. W. Pierce, M. J. Delaney, S. Vaughn, and K. White, “Microwave performance of AlInAs-GalnAs HEMT’s with 0.2 and 0.1 µm gate length,” IEEE Electron Device Lett., vol. 9, no. 12, p. 647, Dec. 1988.
2. P. J. Tasker and B. Hughes, “Importance of source and drain resistance to the maximum f t of millimeter-wave MODFET’s, IEEE Electron Device Lett., vol. 10, no. 8, p. 291, July 1989.