Ten-nanometer resolution nanolithography using newly developed 50-kv electron beam direct writing system

Japanese Journal of Applied Physics

Volumn 30, Issue 11S, 1991, Pages 3266-3271

  Ochiai, Yukinori ^a   Baba, Masakazu ^a   Watanabe, Heiji ^a   Matsui, Shinji ^a  

^a NEC CORPORATION   (Japan)

Author keywords

Electron beam lithography; Electron beam induced deposition; Mesoscopic physics; Nanostructure; Resist

Indexed keywords

POLYMETHYL METHACRYLATES; SEMICONDUCTING SILICON;

NANOLITHOGRAPHY; PROXIMITY EFFECTS;

LITHOGRAPHY;

EID: 0026256001     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.30.3266     Document Type: Article

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