Impact Ionization Phenomena in Algaas/GaAs Hemt’s

IEEE Transactions on Electron Devices

Volumn 38, Issue 11, 1991, Pages 2571-2573

  Canali, C ^a   Paccagnella, A ^a   Pisoni, P ^a   Tedesco, C ^a   Telaroli, P ^a   Zanoni, E ^a  

^a UNIVERSITY OF PADOVA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICES, MESFET; SEMICONDUCTOR MATERIALS;

ALUMINUM GALLIUM ARSENIDE; HEMTS; IMPACT IONIZATION CURRENTS;

TRANSISTORS, HIGH ELECTRON MOBILITY;

EID: 0026254249     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.97428     Document Type: Article

References (11)

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