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IEEE Transactions on Electron Devices
Volumn 38, Issue 11, 1991, Pages 2527-2530
Pre-turn-on source bipolar injection in graded NMOST's
Author keywords

[No Author keywords available]
Indexed keywords

MATHEMATICAL MODELS; TRANSISTORS, BIPOLAR;
EID: 0026254123     PISSN: 00189383     EISSN: None     Source Type: None    
DOI: 10.1109/16.97418     Document Type: Article
Times cited : (8)
References (12)
  • 2
    • 0023963075 scopus 로고
    • A circuit simulation model for bipolar induced breakdown in MOSFET
    • M. Pinto-Guedes P. Chan A circuit simulation model for bipolar induced breakdown in MOSFET IEEE Trans. Computer-Aided Des. 7 2 289 294 1988
    • (1988) IEEE Trans. Computer-Aided Des. , vol.7 , Issue.2 , pp. 289-294
    • Pinto-Guedes, M.1    Chan, P.2
  • 3
    • 0023346895 scopus 로고
    • A study of channel avalanche breakdown in scaled n-MOSFET's
    • S. Laux F. Gaensslen A study of channel avalanche breakdown in scaled n-MOSFET's IEEE Trans. Electron Devices ED-34 5 1066 1073 1987
    • (1987) IEEE Trans. Electron Devices , vol.ED-34 , Issue.5 , pp. 1066-1073
    • Laux, S.1    Gaensslen, F.2
  • 6
    • 0020203740 scopus 로고
    • Short-channel MOS transistors in the avalanche-multiplication regime
    • W. Muller L. Risch A. Schutz Short-channel MOS transistors in the avalanche-multiplication regime IEEE Trans. Electron Devices ED-29 11 1778 1784 1982
    • (1982) IEEE Trans. Electron Devices , vol.ED-29 , Issue.11 , pp. 1778-1784
    • Muller, W.1    Risch, L.2    Schutz, A.3
  • 7
    • 0020896947 scopus 로고
    • Behavior of holes generated by impact ionization in n-channel MOSFET's
    • N. Kotani S. Kawazu S. Komori Behavior of holes generated by impact ionization in n-channel MOSFET's IEEE Trans. Electron Devices ED-30 12 1678 1679 1983
    • (1983) IEEE Trans. Electron Devices , vol.ED-30 , Issue.12 , pp. 1678-1679
    • Kotani, N.1    Kawazu, S.2    Komori, S.3
  • 8
    • 0020091286 scopus 로고
    • Surface conduction in short-channel MOS devices as a limitation to VLSI scaling
    • B. Eitan D. Frohman-Bentehowsky Surface conduction in short-channel MOS devices as a limitation to VLSI scaling IEEE Trans. Electron Devices ED-29 2 254 266 1982
    • (1982) IEEE Trans. Electron Devices , vol.ED-29 , Issue.2 , pp. 254-266
    • Eitan, B.1    Frohman-Bentehowsky, D.2
  • 9
    • 0024684021 scopus 로고
    • Drain-engineered hot-electron-resistant device structures: A review
    • J. J. Sanches K. K. Hsuen T. A. DeMassa Drain-engineered hot-electron-resistant device structures: A review IEEE Trans. Electron Devices 36 6 1125 1132 1989
    • (1989) IEEE Trans. Electron Devices , vol.36 , Issue.6 , pp. 1125-1132
    • Sanches, J.J.1    Hsuen, K.K.2    DeMassa, T.A.3
  • 10
    • 0023845828 scopus 로고
    • The effect of impact ionization induced bipolar action on n-channel hot-electron degradation
    • G. Krieger P. P. Cuevas M. N. Misheloff The effect of impact ionization induced bipolar action on n-channel hot-electron degradation IEEE Electron Device Lett. 9 1 26 28 1988
    • (1988) IEEE Electron Device Lett. , vol.9 , Issue.1 , pp. 26-28
    • Krieger, G.1    Cuevas, P.P.2    Misheloff, M.N.3
  • 11
    • 0019664378 scopus 로고
    • A unified model for hot-electron currents in MOSFET's
    • P. K. Ko R. S. Muller C. Hu A unified model for hot-electron currents in MOSFET's IEDM Tech. Dig. 600 603 IEDM Tech. Dig. 1981
    • (1981) , pp. 600-603
    • Ko, P.K.1    Muller, R.S.2    Hu, C.3
  • 12
    • 0003750001 scopus 로고
    • Operation and Modeling of the MOS Transistor
    • McGraw-Hill New York
    • Y. P. Tsividis Operation and Modeling of the MOS Transistor 1987 McGraw-Hill New York
    • (1987)
    • Tsividis, Y.P.1

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.