Reactive ion Etching of Silicon Trenches Using SF6/O2 Gas Mixtures

Journal of the Electrochemical Society

Volumn 138, Issue 10, 1991, Pages 3076-3081

  Syau, Tsengyou ^a   Baliga, B Jayant ^a   Hamaker, Raymond W ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING - ANISOTROPY; ETCHING - CHEMICAL REACTIONS; MICROSCOPIC EXAMINATION - SCANNING ELECTRON MICROSCOPY; SPECTROSCOPY, AUGER ELECTRON;

REACTIVE ION ETCHING; SULFUR HEXAFLUORIDE;

SEMICONDUCTING SILICON;

EID: 0026238437     PISSN: 00134651     EISSN: 19457111     Source Type: Journal    
DOI: 10.1149/1.2085371     Document Type: Article

References (22)

1. J. W. Coburn and H. F. Winters, J. Vac. Sci. Technol., 16 391 (1979)
2. Y. C. S. Yu, C. A. Hacherl, E. E. Patton, E. L. Lane, T. Yamaguchi, and S. S. Dottarar, Journal of the Electrochemical Society, 137, 1942 (1990).
3. H. Sunami, T. Kure, N. Hashimoto, K. Itoh, T. Toyabe, and S. Asai, IEEE Electron Device Letter, EDL-4, 90 (1983).
4. D. Ueda, H. Takagi, and G. Kano, IEEE IEDM, 638 (1986).
5. H.-R. Chang, R. D. Black, V. A. K. Temple, W. Tantra-porn, and B. J. Baliga, IEEE IEDM, 642 (1986).
6. K. M. Eisele, Journal of the Electrochemical Society, 128,123 (1981).
7. D. H. Bower, Journal of the Electrochemical Society, 129, 796 (1982).
8. D. L. Flamm, V. M. Donnely, and J. A. Mucha, J. Appl Phys., 52, 3633 (1981).
9. P. Parrens, J. Vac. Sci. Technol., 19,1403 (1981).
10. C. Pomot, B. Mahi, B. Petit, Y. Arnal, and J. Pelletier, J. Vac. Sci. Technol. B, 4,1 (1986).
11. R. W. Boswell and A. Bouchoule, J. Vac. Sci. Technol. B, 5, 883 (1987).
12. R. Pinto, K. V. Ramanathan, and R. S. Babu, Journal of the Electrochemical Society, 134, 165 (1987).
13. M. J. Vasile, J. Appl. Phys., 51, 2510 (1980).
14. H. W. Lehmann and R, Widmer, J. Vac. Sci. Technol., 17,1177 (1980).
15. T. P. Chow and G. M. Fanelli, Journal of the Electrochemical Society, 132, 1969 (1985).
16. M. Mieth and A. Barker, J. Vac. Sci. Technol. A, 1, 629 (1983).
17. R. W. Light and H. B. Bell, Journal of the Electrochemical Society, 130, 1567 (1983).
18. M. Zhang, J. Z. Li, I. Adesida, and E. D. Wolf, J. Vac. Sci. Technol. B, 1,1037 (1983).
19. H. H. Wang, in “Proceedings of International IEEE V-MIC Conference,” p. 335, IEEE (1985).
20. J. P. McVittie and C. Gonzalez, in “Plasma Processing,” G. S. Mathrad, G. C. Schwartz; and G. Smolinsky, Editor, PV 85–1, p. 552, The Electrochemical Society Softbound Prsceedings Series, Pennington, NJ (1985).
21. R. J. Schutz, in “VLSI Technology,” S. M. Sze, Editor, Chap. 5, McGraw Hill, New York (1989).
22. R. d'Agostino and D. L. Flamm, J. Appl. Phys., 52, 162 (1981).