Demonstration of Enhanced Performance of an Inp/Ingaas Heterojunction Phototransistor with a Base Terminal

IEEE Electron Device Letters

Volumn 12, Issue 10, 1991, Pages 550-552

  Chandrasekhar, S ^a   Hoppe, M K ^a   Dentai, Andrew G ^a   Joyner, C H ^a   Qua, G J ^b  

^a LUCENT TECHNOLOGIES   (United States)

^b UNIVERSITY OF ROCHESTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING GALLIUM ARSENIDE--APPLICATIONS; SEMICONDUCTING INDIUM COMPOUNDS--APPLICATIONS; SEMICONDUCTOR DEVICES--HETEROJUNCTIONS;

BASE TERMINAL; HETEROJUNCTION PHOTOTRANSISTOR (HPT); OPTICAL GAIN; OPTIMALLY CHOSEN EXTERNAL BASE CURRENT; SMALL-SIGNAL FREQUENCY RESPONSE;

TRANSISTORS;

EID: 0026238377     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.119185     Document Type: Article

References (6)

1. J. C. Campbell, in Phototransistors for Lightwave Communications, vol. 22, part D, Semiconductors and Semimetals, Lightwave Communications Technology. Orlando, FL: Academic, 1985.
2. J. C. Campbell, W. T. Tsang, and G. J. Qua, “InP/In0.53Ga0.47As heterojunction phototransistors grown by chemical beam epitaxy,” IEEE Electron Device Lett., vol. EDL-8, pp. 171–173, 1987.
3. L. Y. Leu, J. T. Gardner, and S. R. Forrest, “High sensitivity In0.53Ga0.47As/InP heterojunction phototransistor,” Appl. Phys. Lett., vol. 57, pp. 1251–1253, 1990.
4. D. Fritzsche, E. Kuphal, and R. Aulbach, “Fast response InP/InGaAsP heterojunction phototransistors,” Electron. Lett., vol. 17, pp. 178–180, 1981.
5. I. C. Campbell and A. G. Dentai, “InP/InGaAs heterojunction phototransistors with integrated light emitting diode,” Appl. Phys. Lett., vol. 41, pp. 192–193, 1982.
6. S. Chandrasekhar et al., “Integrated InP/InGaAs heterojunction bipolar photoreceiver,” Electron. Lett., vol. 24, pp. 1443–1444, 1988.