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Volumn 26, Issue 9, 1991, Pages 1249-1258

Design of Submicrometer CMOS Differential Pass-Transistor Logic Circuits

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC CIRCUITS, BUFFER - DESIGN; INTEGRATED CIRCUITS, CMOS - DESIGN; MICROELECTRONICS - NOISE, SPURIOUS SIGNAL;

EID: 0026220947     PISSN: 00189200     EISSN: 1558173X     Source Type: Journal    
DOI: 10.1109/4.84941     Document Type: Article
Times cited : (10)

References (8)
  • 2
    • 21544479606 scopus 로고
    • Optimization of submicron CMOS differential pass-transistor logic
    • J. H. Pasternak and C. A. T. Salama, “Optimization of submicron CMOS differential pass-transistor logic,” in Proc. ESSCIRC (Vienna, Austria), 1989, pp. 218–221.
    • (1989) Proc. ESSCIRC (Vienna , pp. 218-221
    • Pasternak, J.H.1    Salama, C.A.T.2
  • 3
    • 0024936741 scopus 로고
    • Differential pass-transistor logic partial-product generator for iterative multipliers
    • J. H. Pasternak and C. A. T. Salama, “Differential pass-transistor logic partial-product generator for iterative multipliers,” in Proc. ECCTD (Brighton, U.K.), 1989, pp. 176–179.
    • (1989) Proc. ECCTD (Brighton , pp. 176-179
    • Pasternak, J.H.1    Salama, C.A.T.2
  • 4
    • 84869398058 scopus 로고
    • A 3.8ns CMOS 16 × 16 multiplier using complementary pass transistor logic
    • K. Yano et al., “A 3.8ns CMOS 16 × 16 multiplier using complementary pass transistor logic,” in Proc. CICC (San Diego, CA), 1989.
    • (1989) Proc. CICC (San Diego
    • Yano, K.1
  • 5
    • 0019584636 scopus 로고
    • Measurement of high field drift velocity of electrons in inversion layers on silicon
    • J. A. Cooper, Jr., and D. F. Nelson, “Measurement of high field drift velocity of electrons in inversion layers on silicon,” IEEE Electron Device Lett., vol. EDL-2, pp. 171–173, 1981.
    • (1981) IEEE Electron Device Lett. , vol.EDL-2 , pp. 171-173
    • Cooper, J.A.1    Nelson, D.F.2
  • 6
    • 0024055902 scopus 로고
    • An engineering model for short-channel MOS devices
    • K. Y. Toh, P. K. Ko, and R. G. Meyer, “An engineering model for short-channel MOS devices,” IEEE J. Solid-State Circuits, vol. 23, pp. 950–958, 1988.
    • (1988) IEEE J. Solid-State Circuits , vol.23 , pp. 950-958
    • Toh, K.Y.1    Ko, P.K.2    Meyer, R.G.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.