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Volumn 10, Issue 9, 1991, Pages 1201-1209

A Massively Parallel Algorithm for Three-Dimensional Device Simulation

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SYSTEMS, DIGITAL - PARALLEL PROCESSING; COMPUTERS, SUPERCOMPUTER; DIFFUSION - COMPUTER SIMULATION; MATHEMATICAL TECHNIQUES - ITERATIVE METHODS;

EID: 0026219562     PISSN: 02780070     EISSN: 19374151     Source Type: Journal    
DOI: 10.1109/43.85767     Document Type: Article
Times cited : (13)

References (23)
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  • 8
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  • 13
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    • Simulation of microcrack effects in dissolution of positive resists exposed by x-ray lithography
    • R. Guerrieri and A. Neureuther, “Simulation of microcrack effects in dissolution of positive resists exposed by x-ray lithography,” IEEE Trans. Computer-Aided Design, vol. 7, pp. 755–764, 1988.
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    • Guerrieri, R.1    Neureuther, A.2
  • 14
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    • Exploration of scattering from topography with massively parallel computers
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    • Gamelin, J.1    Guerrieri, R.2    Neureuther, A.R.3
  • 15
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    • Flynn, M.J.1
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    • Analysis and Simulation of Semiconductor Devices
    • Wien, Austria: Springer-Verlag
    • S. Selberherr, Analysis and Simulation of Semiconductor Devices. Wien, Austria: Springer-Verlag, 1984.
    • (1984)
    • Selberherr, S.1
  • 17
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    • Large-signal analysis of a silicon Read diode oscillator
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  • 18
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.