Numerical Simulations of 1.5 μm Actively Mode-Locked Semiconductor Lasers Including Dispersive Elements and Chirp

IEEE Journal of Quantum Electronics

Volumn 27, Issue 8, 1991, Pages 1981-1989

  Lowery, Arthur J ^a   Marshall, Ian W ^b  

^a UNIVERSITY OF NOTTINGHAM   (United Kingdom)

^b MARTLESHAM HEATH   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; LASERS - STABILITY; MATHEMATICAL TECHNIQUES - NUMERICAL METHODS; OPTICAL COMMUNICATION EQUIPMENT; SEMICONDUCTOR MATERIALS - CHARGE CARRIERS;

LASER CHIRP; NUMERICAL SIMULATION; TRANSMISSION LINE LASER MODEL;

LASERS, SEMICONDUCTOR;

EID: 0026204986     PISSN: 00189197     EISSN: 15581713     Source Type: Journal    
DOI: 10.1109/3.83408     Document Type: Article

References (37)

1. H. Inaba, “Generation and control of transform-limited optical pulses in subpico- and picosecond regions from semiconductor laser diodes,” Int. J. Electron., vol. 60, pp. 5–21, 1985.
2. S. Corzine, J. E. Bowers, G. Przybylek, U. Koren, B. I. Miller, and C. E. Soccolich, “Actively mode-locked GalnAsP laser with picosecond output,” Appl. Phys. Lett., vol. 52, pp. 348–350, 1988.
3. J. E. Bowers, P. A. Morton, A. Mar, and S. W. Corzine, “Actively mode-locked semiconductor lasers,” IEEE J. Quantum Electron., vol. 25, pp. 1426–1439, 1989.
4. I. W. Marshall and W. J. Devlin, “Amplification of 1.5 ps pulses by a semiconductor laser amplifier,” IEE Colloquium on Opt. Amplif. Commun., London, UK, Oct. 27, 1989, paper 15.
5. I. W. Marshall, A. J. Lowery, D. M. Cooper, and D. J. Elton, “Optimization of actively mode-locked InGaAsP diode lasers with dispersive external cavities,” IEEE J. Quantum Electron., to be published.
6. R. S. Tucker, G. Eisenstein, and I. P. Kaminov, “10 GHZ active mode-locking of a 1.3 μm ridge-waveguide laser in an optical-fiber cavity,” Electron. Lett., vol. 19, pp. 552–553, 1983.
7. R. S. Tucker, S. K. Korotky, G. Eisenstein, U. Koren, L. W. Stulz, and J. J. Veselka, “20 GHz active mode-locking of a 1.55 μm InGaAsP laser,” Electron. Lett., vol. 21, pp. 239–240, 1985.
8. G. Raybon, R. S. Tucker, G. Eisenstein, and C. H. Henry, “Active mode-locking of 1.3 μm extended-cavity silicon chip Bragg reflector laser,” Electron. Lett., vol. 24, pp. 1563–1565, 1988.
9. R. S. Tucker, U. Koren, G. Raybon, C. A. Burrus, B. I. Miller, T. L. Koch, and G. Eisenstein, “40 GHz active mode-locking in a 1.5 μm monolithic extended-cavity laser,” Electron. Lett., vol. 25, pp. 621–622, 1989.
10. R. S. Tucker, G. Eisenstein, and S. K. Korotky, “Optical time-division multiplexing for very high bit-rate transmission,” J. Lightwave Technol., vol. LT-6, pp. 1737–1749.
11. A. J. Taylor, J. M. Weisenfeld, G. Eisenstein, and R. S. Tucker, “Timing jitter in mode-locked and gain-switched InGaAsP injection lasers,” Appl. Phys. Lett., vol. 49, pp. 681–683, 1986.
12. J. Chen and D. Pan, “A rate equation analysis of actively mode-locked semiconductor lasers,” IEEE J. Quantum Electron., vol. QE-22, pp. 26–31, 1986.
13. J. P. van der Ziel, “Active mode-locking of double heterostructure lasers in an external cavity,” J. Appl. Phys., vol. 52, pp. 4435–4446, 1981.
14. P. Kempf and B. K. Garside, “Dynamics of mode-locked laser diodes employing a repetitive short-pulse drive current,” Appl. Opt., vol. 26, pp. 4522–4527, 1987.
15. J. C. AuYeung, L. A. Bergman, and A. R. Johnson, “Transient behavior of actively mode-locked semiconductor laser diode,” Appl. Phys. Lett., vol. 41, pp. 124–126, 1982.
16. P. Phelan and D. J. Bradley, “Hybrid mode-locking of an angled-stripe CCC laser,” Electron. Lett., vol. 22, pp. 738–740, 1986.
17. P. P. Vasil'ev, V. N. Morozov, and A. B. Sergeev, “Bandwidth-limited picosecond pulses from an injection GaAlAs DH laser with an external dispersive cavity,” IEEE J. Quantum Electron., vol. QE-21, pp. 576–581, 1985.
18. J. McInerney, L. Reekie, and D. J. Bradley, “Bandwidth-limited picosecond pulse generation by hybrid mode-locking in a ring cavity GaAlAs laser,” Electron. Lett., vol. 21, pp. 117–118, 1985.
19. A. P. Bogatov, P. P. Vasil'ev, V. N. Morozov, and A. B. Sergeev, “Direct detection of picosecond pulses emitted by an injection laser with active mode locking,” Sov. J. Quantum. Electron., vol. 13, pp. 1303–1304, 1983.
20. G. J. Aspin and J. E. Carroll, “Simplified theory for mode locking in injection lasers,” Solid-State Electron Dev., vol. 3, pp. 220–223, 1979.
21. M. S. Demokan, “A model of a diode laser actively mode-locked by gain modulation,” Int. J. Electron., vol. 60, pp. 67–80, 1986.
22. L. D. Westbrook, “Measurements of dg/dN and their dependence on photon energy in λ = 1.5 μm InGaAsP laser diodes,” IEE Proc. J. Optoelectron., vol. 133, pp. 135–142, 1986.
23. L. D. Westbrook and M. J. Adams, “Simple expressions for the linewidth enhancement factor in direct-gap semiconductors,” IEE Proc. J. Optoelectron., vol. 134, pp. 209–214, 1987.
24. M. Osinski and J. Buus, “Linewidth broadening factor in semiconductor lasers—an overview,” IEEE J. Quantum Electron., vol. QE-23, pp. 9–29, 1987.
25. A. J. Lowery, “A new time-domain model for active modelocking based on the transmission-line laser model,” IEE Proc. J. Optoelectron., vol. 136, pp. 264–272, 1989.
26. ─, “Cyclic three-phase amplitude jitter in modelocked semiconductor lasers,” Electron. Lett., vol. 25, pp. 799–800, June 1989.
27. A. J. Lowery and I. W. Marshall, “Stabilization of modelocked pulses using a traveling-wave semiconductor laser amplifier,” Electron. Lett., vol. 26, pp. 104–106, Jan. 1990.
28. A. J. Lowery, “A new dynamic semiconductor laser model based on the transmission line modeling method,” IEE Proc. J. Optoelectron., vol. 134, pp. 281–289, 1987.
29. ─, “A model for picosecond dynamic laser chirp based on the transmission line laser model,” IEE Proc. J. Optoelectron., vol. 135, pp. 126–132, 1988.
30. ─, “A new dynamic multimode model for external cavity semiconductor lasers,” IEE Proc. J. Optoelectron., vol. 136, pp. 229–237, 1989.
31. ─, “Modelling spectral effects of dynamic saturation in semiconductor laser amplifiers using the transmission line laser model,” IEE Proc. J. Optoelectron., vol. 136, pp. 320–324, 1989.
32. ─, “Transmission-line modelling of semiconductor lasers: The transmission-line laser model,” Int. J. Numer. Model., to be published.
33. R. Nagarajan and T. Kamiya, “Observation of ultrashort (<4ps) gain-switched optical pulses from long wavelength multiple quantum well lasers,” Appl. Phys. Lett., vol. 55, pp. 1273–1275, 1989.
34. A. Mozer, S. Hausser, and M. Pukuhn, “Quantitative evaluation of gains and losses in quaternary lasers,” IEEE J. Quantum Electron., vol. QE-21, pp. 719–725, 1985.
35. M. Serenyi, J. Kuhl, and E. O. Gobel, “Pulse shortening of actively mode-locked diode lasers by wavelength tuning,” Appl. Phys. Lett., vol. 50, pp. 1213–1215, 1987.
36. J. C. Goodwin and B. K. Garside, “Modulation detuning characteristics of actively mode-locked diode lasers,” IEEE J. Quantum Electron., vol. QE-19, pp. 1068–1073, 1983.
37. H. A. Haus, “Theory of modelocking of a laser diode in an external resonator,” J. Appl. Phys., vol. 51, pp. 4042–4049, 1980.