In situ monitoring of gan growth using interference effects

Japanese Journal of Applied Physics

Volumn 30, Issue 8, 1991, Pages 1620-1627

  Nakamura, Shuji ^a  

^a NICHIA CORPORATION   (Japan)

Author keywords

AIN buffer layer; GaN; In situ monitoring; Interference effect; IR radiation thermometer; IR radiation transmission intensity oscillation; MOCVD

Indexed keywords

INFRARED DETECTORS; ORGANOMETALLICS; SEMICONDUCTING FILMS--CHEMICAL VAPOR DEPOSITION;

GALLIUM NITRIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0026203802     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.30.1620     Document Type: Article

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