Type II indirect and type I direct recombinations in GaAs/A1As single quantum wells

Materials Science and Engineering B

Volumn 9, Issue 1-3, 1991, Pages 285-288

  Holt, D B ^a   Norman, C E ^a   Salviati, G ^b   Franchi, S ^b   Bosacchi, A ^b  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

^b CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; OPTOELECTRONIC DEVICES; SEMICONDUCTING FILMS - OPTICAL PROPERTIES;

ALUMINUM ARSENIDE; QUANTUM WELLS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0026192940     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/0921-5107(91)90187-Z     Document Type: Article

References (7)

1. A bird's-eye view on the evolution of semiconductor superlattices and quantum wells
2. Carrier dynamics and recombination mechanisms in staggered-alignment heterostructures
3. Microscopy of Semiconducting Materials, 1983