Mechanisms of high psg/sio2 selective etching in a highly polymerized fluorocarbon plasma

Japanese Journal of Applied Physics

Volumn 30, Issue 7 R, 1991, Pages 1556-1561

  Ikegami, Naokatsu ^a   Ozawa, Nobuo ^a   Miyakawa, Yasuhiro ^a   Kanamori, Jun ^a  

^a OKI ELECTRIC INDUSTRY CO   (Japan)

Author keywords

Active site; Ar+ induced adsorption layer surface interaction; Chemisorption; Dangling bond; Fluorocarbon plasma; PSG Si02 selectivity; SiOxFK reaction layer; XPS measurement

Indexed keywords

ION BEAMS; POLYMERIZATION; SILICA; SPECTROSCOPY, PHOTOELECTRON;

FLUOROCARBON; PHOSPHOSILICATE GLASS; SELECTIVE ETCHING;

GLASS;

EID: 0026191243     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.30.1556     Document Type: Article

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