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Volumn 38, Issue 7, 1991, Pages 1641-1649

New Physical Insights and Models for High-Voltage LDMOST IC CAD

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUITS--COMPUTER AIDED DESIGN; TRANSISTORS--STRUCTURES;

EID: 0026189298     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.85161     Document Type: Article
Times cited : (54)

References (13)
  • 2
    • 0025401607 scopus 로고
    • Physical DMOST modeling for high-voltage IC CAD
    • Mar.
    • Y.-S. Kim and J. G. Fossum, “Physical DMOST modeling for high-voltage IC CAD,” IEEE Trans. Electron Devices, vol. 37, pp. 797–803, Mar. 1990.
    • (1990) IEEE Trans. Electron Devices , vol.37 , pp. 797-803
    • Kim, Y.-S.1    Fossum, J.G.2
  • 3
    • 0019703894 scopus 로고
    • Effects of drift region parameters on the static properties of power LDMOST
    • Dec.
    • S. Colak, “Effects of drift region parameters on the static properties of power LDMOST,” IEEE Trans. Electron Devices, vol. ED-28, pp. 1455–1466, Dec. 1981.
    • (1981) IEEE Trans. Electron Devices , vol.ED-28 , pp. 1455-1466
    • Colak, S.1
  • 4
    • 0022734849 scopus 로고
    • High-voltage multiple-resistivity drift-region LDMOS
    • J. G. Mena and C. A. T. Salama, “High-voltage multiple-resistivity drift-region LDMOS,” Solid-State Electron., vol. 29, pp. 647–656, 1986.
    • (1986) Solid-State Electron. , vol.29 , pp. 647-656
    • Mena, J.G.1    Salama, C.A.T.2
  • 5
    • 0017007713 scopus 로고
    • A computer-aided design model for high-voltage double diffused MOS (DMOS) transistors
    • Oct.
    • M. D. Pocha and R. W. Dutton, “A computer-aided design model for high-voltage double diffused MOS (DMOS) transistors,” IEEE J. Solid-State Circuits, vol. SC-11, pp. 718–726, Oct. 1976.
    • (1976) IEEE J. Solid-State Circuits , vol.SC-11 , pp. 718-726
    • Pocha, M.D.1    Dutton, R.W.2
  • 6
    • 0022880484 scopus 로고
    • An accurate dc model for high-voltage lateral DMOS transistors suited for CAD
    • Dec.
    • H. R. Claessen and P. van der Zee, “An accurate dc model for high-voltage lateral DMOS transistors suited for CAD,” IEEE Trans. Electron Devices, vol. ED-33, pp. 1964–1970, Dec. 1986.
    • (1986) Zee , vol.ED-33 , pp. 1964-1970
    • Claessen, H.R.1    van der, P.2
  • 8
    • 84941531452 scopus 로고
    • Physical modeling of MOS-controlled high-voltage dedevices for integrated circuit computer-aided design
    • Gainesville, FL
    • Y.-S. Kim, “Physical modeling of MOS-controlled high-voltage devices for integrated circuit computer-aided design,” Ph.D. dissertation, University of Florida, Gainesville, FL, 1990.
    • (1990) Ph.D. dissertation, University of Florida
    • Kim, Y.-S.1
  • 10
    • 0018714042 scopus 로고
    • High voltage thin layer devices (RESURF devices)
    • J. A. Appels and H. M. J. Vaes, “High voltage thin layer devices (RESURF devices),” in IEDM Tech. Dig., 1979, pp. 238–241.
    • (1979) IEDM Tech. Dig. , pp. 238-241
    • Appels, J.A.1    Vaes, H.M.J.2
  • 11
    • 0023998757 scopus 로고
    • Network representations of LIGBT structures for CAD of power integrated circuits
    • Apr.
    • J. G. Fossum, R. J. McDonald, and M. A. Shibib. “Network representations of LIGBT structures for CAD of power integrated circuits,” IEEE Trans. Electron Devices, vol. 35, pp. 507–515, Apr. 1988.
    • (1988) IEEE Trans. Electron Devices , vol.35 , pp. 507-515
    • Fossum, J.G.1    McDonald, R.J.2    Shibib, M.A.3
  • 12
    • 0022085399 scopus 로고
    • A physical model for the conductance of gated p-i-n switches
    • July
    • R. J. McDonald, J. G. Fossum, and M. A. Shibib, “A physical model for the conductance of gated p-i-n switches,” IEEE Trans. Electron Devices, vol. ED-32, pp. 1314–1320, July 1985.
    • (1985) IEEE Trans. Electron Devices , vol.ED-32 , pp. 1314-1320
    • McDonald, R.J.1    Fossum, J.G.2    Shibib, M.A.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.