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Volumn 26, Issue 6, 1991, Pages 850-858

Three-Region Analytical Models for MESFET’s in Low-Voltage Digital Circuits

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; LOGIC DESIGN; SEMICONDUCTOR DEVICES, MESFET - MATHEMATICAL MODELS;

EID: 0026173925     PISSN: 00189200     EISSN: 1558173X     Source Type: Journal    
DOI: 10.1109/4.78274     Document Type: Article
Times cited : (8)

References (15)
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  • 4
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    • C. T. M. Chang et al., “A subthreshold current model for GaAs MESFET’s,” IEEE Electron Device Lett., vol. EDL-8, pp. 69-72, Aug. 1987.
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  • 5
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  • 9
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    • A comparison of semiconductor devices for high-speed logic
    • May
    • P. M. Solomon, “A comparison of semiconductor devices for high-speed logic,” Proc. IEEE, vol. 70, no. 5, pp. 489-509, May 1982.
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  • 10
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.