메뉴 건너뛰기




Volumn 3, Issue 6, 1991, Pages 570-572

2.0 ps, 150 GHz GaAs monolithic photodiode and all-electronic sampler

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUITS, MONOLITHIC; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICES, SCHOTTKY BARRIER;

EID: 0026173744     PISSN: 10411135     EISSN: 19410174     Source Type: Journal    
DOI: 10.1109/68.91038     Document Type: Article
Times cited : (25)

References (7)
  • 1
    • 0021096913 scopus 로고
    • 100 GHz bandwidth planar GaAs Schottky photodiode
    • July 7
    • S. Y. Wang and D. M. Bloom, “100 GHz bandwidth planar GaAs Schottky photodiode,” Electron. Lett., vol. 19, no. 14, pp. 554–555, July 7, 1983.
    • (1983) Electron. Lett. , vol.19 , Issue.14 , pp. 554-555
    • Wang, S.Y.1    Bloom, D.M.2
  • 2
    • 0023647202 scopus 로고
    • 110 GHz high-efficiency photodiodes fabricated from indium tin oxide/GaAs
    • May 7
    • D. G. Parker, P. G. Say, A. M. Hanson, and W. Sibbett, “110 GHz high-efficiency photodiodes fabricated from indium tin oxide/GaAs,” Electron. Lett., vol. 23, no. 10, pp. 527–528, May 7, 1987.
    • (1987) Electron. Lett. , vol.23 , Issue.10 , pp. 527-528
    • Parker, D.G.1    Say, P.G.2    Hanson, A.M.3    Sibbett, W.4
  • 3
  • 6
    • 0025497981 scopus 로고    scopus 로고
    • Monolithic integrated circuits for mm-wave instrumentation
    • Oct. 7 – 10, New Orleans, LA
    • R. A. Marsland, C. J. Madden, D. W. Van Der Weide, M. S. Shakouri, and D. M. Bloom, “Monolithic integrated circuits for mm-wave instrumentation,” in Tech. Dig., 1990 GaAs IC Symp., Oct. 7–10, New Orleans, LA; R. A. Marsland, V. Valdivia, C. J. Madden, M. J. W. Rodwell, and D. M. Bloom, “130 GHz GaAs monolithic integrated circuit sampling head,” Appl. Phys. Lett., vol. 23, no. 6, pp. 592–594, Aug. 7, 1989.
    • Tech. Dig., 1990 GaAs IC Symp.
    • Marsland, R.A.1    Madden, C.J.2    Van Der Weide, D.W.3    Shakouri, M.S.4    Bloom, D.M.5
  • 7


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.