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1
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0021096913
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100 GHz bandwidth planar GaAs Schottky photodiode
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July 7
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S. Y. Wang and D. M. Bloom, “100 GHz bandwidth planar GaAs Schottky photodiode,” Electron. Lett., vol. 19, no. 14, pp. 554–555, July 7, 1983.
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(1983)
Electron. Lett.
, vol.19
, Issue.14
, pp. 554-555
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Wang, S.Y.1
Bloom, D.M.2
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2
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0023647202
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110 GHz high-efficiency photodiodes fabricated from indium tin oxide/GaAs
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May 7
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D. G. Parker, P. G. Say, A. M. Hanson, and W. Sibbett, “110 GHz high-efficiency photodiodes fabricated from indium tin oxide/GaAs,” Electron. Lett., vol. 23, no. 10, pp. 527–528, May 7, 1987.
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(1987)
Electron. Lett.
, vol.23
, Issue.10
, pp. 527-528
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Parker, D.G.1
Say, P.G.2
Hanson, A.M.3
Sibbett, W.4
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3
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84941434261
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Hybrid integration of an InGaAs/InP PIN photodiode with an ultrafast sampling circuit
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Feb
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Y. G. Wey, M. Kamegawa, A. Mar, K. J. Williams, K. Giboney, D. L. Crawford, J. E. Bowers, and M. J. Rodwell, “Hybrid integration of an InGaAs/InP PIN photodiode with an ultrafast sampling circuit,” OFC, pp. PD 12-1-PD 12–4, Feb. 1991.
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(1991)
OFC
, pp. PD12-1-PD12-4
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Wey, Y.G.1
Kamegawa, M.2
Mar, A.3
Williams, K.J.4
Giboney, K.5
Crawford, D.L.6
Bowers, J.E.7
Rodwell, M.J.8
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4
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84941440233
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2.0 psec GaAs monolithic photodiode/sampler
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Mar
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E. Özbay, K. D. Li, and D. M. Bloom, “2.0 psec GaAs monolithic photodiode/sampler,” Picosec. Electron. Optoelectron., pp. PdP3-l-PdP3-4, Mar. 1991.
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(1991)
Picosec. Electron. Optoelectron.
, pp. Pdp3-1-Pdp3-4
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Özbay, E.1
Li, K.D.2
Bloom, D.M.3
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5
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84941432505
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Picosecond GaAs photodetector monolithically integrated with a high-speed sampling circuit
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Mar
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M. Kamegawa, K. Giboney, J. Karin, S. Allen, M. Case, R. Yu, M. J. W. Rodwell, and J. E. Bowers, “Picosecond GaAs photodetector monolithically integrated with a high-speed sampling circuit,” Picosec. Electron. Optoelectron., pp. PdP4-l-PdP4-4, Mar. 1991.
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(1991)
Picosec. Electron. Optoelectron.
, pp. PdP4-1-PdP4-4
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Kamegawa, M.1
Giboney, K.2
Karin, J.3
Allen, S.4
Case, M.5
Yu, R.6
Rodwell, M.J.W.7
Bowers, J.E.8
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6
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0025497981
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Monolithic integrated circuits for mm-wave instrumentation
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Oct. 7 – 10, New Orleans, LA
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R. A. Marsland, C. J. Madden, D. W. Van Der Weide, M. S. Shakouri, and D. M. Bloom, “Monolithic integrated circuits for mm-wave instrumentation,” in Tech. Dig., 1990 GaAs IC Symp., Oct. 7–10, New Orleans, LA; R. A. Marsland, V. Valdivia, C. J. Madden, M. J. W. Rodwell, and D. M. Bloom, “130 GHz GaAs monolithic integrated circuit sampling head,” Appl. Phys. Lett., vol. 23, no. 6, pp. 592–594, Aug. 7, 1989.
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Tech. Dig., 1990 GaAs IC Symp.
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Marsland, R.A.1
Madden, C.J.2
Van Der Weide, D.W.3
Shakouri, M.S.4
Bloom, D.M.5
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7
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0038274910
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130 GHz GaAs monolithic integrated circuit sampling head
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Aug. 7
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R. A. Marsland, V. Valdivia, C. J. Madden, M. J. W. Rodwell, and D. M. Bloom, “130 GHz GaAs monolithic integrated circuit sampling head,” Appl. Phys. Lett., vol. 23, no. 6, pp. 592–594, Aug. 7, 1989.
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(1989)
Appl. Phys. Lett.
, vol.23
, Issue.6
, pp. 592-594
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Marsland, R.A.1
Valdivia, V.2
Madden, C.J.3
Rodwell, M.J.W.4
Bloom, D.M.5
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