Easily manufactured high-speed back-illuminated gainas/inp p-i-n photodiode

IEEE Photonics Technology Letters

Volumn 3, Issue 6, 1991, Pages 530-531

  Makiuchi, M ^a   Hamaguchi, H ^a   Mikawa, T ^a   Wada, O ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING GALLIUM COMPOUNDS;

HIGH-SPEED DETECTORS; INDIUM PHOSPHIDE; P-I-N PHOTODIODES; PLANAR PHOTODIODES;

SEMICONDUCTOR DIODES, PHOTODIODE;

EID: 0026172993     PISSN: 10411135     EISSN: 19410174     Source Type: Journal    
DOI: 10.1109/68.91024     Document Type: Article

References (4)

1. R. S. Sussmann, R. M. Ash, A. J. Moseley, and R. C. Goodfellow, “Ultra-low-capacitance flip-chip-bonded GaInAs pin photodetector for long-wavelength high-data-rate fiber-optic systems,” Electron. Lett., vol. 21, 593–595, 1985.
2. M. Makiuchi, O. Wada, T. Kumai, H. Hamaguchi, O. Aoki, and Y. Oikawa, “Small-junction-area GaInAs/InP pin photodiode with monolithic microlens,” Electron. Lett., vol. 24, pp. 109–110, 1988.
3. O. Wada, T. Kumai, H. Hamaguchi, M. Makiuchi, A. Kuramata, and T. Mikawa, “High-reliability flip-chip GaInAs/InP pin photodiode,” Electron. Lett., vol. 26, pp. 1484–1485, 1990.
4. C. P. Skrimshire, J. D. Farr, D. F. Sloan, M. J. Robertson, P. A. Putland, J. C. D. Stokoe, and R. R. Sutherland, “Reliability of mesa and planar InGaAs PIN photodiodes,” Proc. IEE, vol. 137, part J, pp. 74–78, Feb. 1990.