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50
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Electrical damage induced by ion beam etching of GaAs
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Photoluminescence measurement of sidewall damage in etched InGaAsP/InP and GaAs/AlGaAs microstructures
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P. Grabbe, A. Scherer, K. Kash, R. Bhat, J. P. Harbison, L. T. Florez, and M. Koza, “Photoluminescence measurement of sidewall damage in etched InGaAsP/InP and GaAs/AlGaAs microstructures,” Material Res. Soc. Symp. Proc., vol. 144, p. 145, 1989.
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A. Von Lehmen, C. Chang-Hasnain, M. Orenstein, J. Wullert, N. Stoffel, and J. P. Harbison, “Large electronically addressable VCSE laser arrays,” presented at the Top. Meet. Opt. Multiple Access Networks, Monterey, CA, July 25-27, 1990.
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Top. Meet. Opt. Multiple Access Networks
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Von Lehmen, A.1
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F. S. Choa, Y. H. Lee, B. Tell, T. L. Koch, C. A. Burrus, J. L. Jewell, R. E. Leibenguth, and G. Boyd, “Dynamic characteristics of a high-performance vertical-cavity surface-emitting laser,” presented at the Conf. Opt. Fiber Commun. '91, San Diego, CA, Feb. 18-22, 1991.
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Conf. Opt. Fiber Commun. '91
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C. J. Chang-Hasnain, J. P. Harbison, G. Hasnain, A. Von Lehmen, L. T. Florez, and N. G. Stoffel, “Dynamic polarization and transverse mode characteristics of vertical cavity surface emitting lasers,” IEEE J. Quantum Electron., this issue., pp. 1368–1376.
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IEEE J. Quantum Electron.
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