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Volumn 27, Issue 6, 1991, Pages 1332-1346

Vertical-Cavity Surface-Emitting Lasers: Design, Growth, Fabrication, Characterization

Author keywords

[No Author keywords available]

Indexed keywords

ION BEAMS; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR MATERIALS--ETCHING;

EID: 0026172831     PISSN: 00189197     EISSN: 15581713     Source Type: Journal    
DOI: 10.1109/3.89950     Document Type: Article
Times cited : (464)

References (72)
  • 1
    • 84970082436 scopus 로고
    • GaInAsP/InP surface emitting injection lasers
    • Dec.
    • H. Soda, K. Iga, C. Kitahara, and Y. Suematsu, “GaInAsP/InP surface emitting injection lasers,” Japan. J. Appl. Phys., vol. 18, pp. 2329–2330, Dec. 1979.
    • (1979) Japan. J. Appl. Phys. , vol.18 , pp. 2329-2330
    • Soda, H.1    Iga, K.2    Kitahara, C.3    Suematsu, Y.4
  • 3
    • 0024069478 scopus 로고
    • Surface emitting semiconductor lasers
    • Sept.
    • K. Iga, F. Koyama, and S. Kinoshita, “Surface emitting semiconductor lasers,” IEEE J. Quantum Electron., vol. 24, pp. 1845–1855, Sept. 1988.
    • (1988) IEEE J. Quantum Electron. , vol.24 , pp. 1845-1855
    • Iga, K.1    Koyama, F.2    Kinoshita, S.3
  • 4
    • 0022015570 scopus 로고
    • Two-dimensional array of GalnAsP/InP surface-emitting lasers
    • S. Uchiyama and K. Iga, “Two-dimensional array of GalnAsP/InP surface-emitting lasers,” Electron. Lett., vol. 21, pp. 162–164, 1985.
    • (1985) Electron. Lett. , vol.21 , pp. 162-164
    • Uchiyama, S.1    Iga, K.2
  • 5
    • 0023104591 scopus 로고
    • Microcavity GaAlAs/GaAs surface emitting laser with Ith = 6 mA
    • Jan.
    • K. Iga, S. Kinoshita, and F. Koyama, “Microcavity GaAlAs/GaAs surface emitting laser with Ith = 6 mA,” Electron. Lett., vol. 23, pp. 134–136, Jan. 1987.
    • (1987) Electron. Lett. , vol.23 , pp. 134-136
    • Iga, K.1    Kinoshita, S.2    Koyama, F.3
  • 6
    • 0001339649 scopus 로고
    • Room-temperature continuous wave lasing characteristics of a GaAs vertical cavity surface-emitting laser
    • F. Koyama, S. Kinoshita, and K. Iga, “Room-temperature continuous wave lasing characteristics of a GaAs vertical cavity surface-emitting laser,” Appl. Phys. Lett., vol. 55, pp. 221–223, 1989.
    • (1989) Appl. Phys. Lett. , vol.55 , pp. 221-223
    • Koyama, F.1    Kinoshita, S.2    Iga, K.3
  • 7
    • 0024749632 scopus 로고
    • Spectral linewidth of Al-GaAs/GaAs surface-emitting laser
    • Oct.
    • H. Tanobe, F. Koyama, and K. Iga, “Spectral linewidth of Al-GaAs/GaAs surface-emitting laser,” Electron. Lett., vol. 25, pp. 1444–1446, Oct. 1989.
    • (1989) Electron. Lett. , vol.25 , pp. 1444-1446
    • Tanobe, H.1    Koyama, F.2    Iga, K.3
  • 8
    • 0024645378 scopus 로고
    • Buried heterostructure GaAs/AlGaAs distributed Bragg reflector surface emitting laser with very low threshold (5.2 mA) under room temperature CW conditions
    • Apr.
    • A. Ibariki, K. Kawashima, K. Furusawa, T. Ishikawa, T. Yamagushi, and T. Niina, “Buried heterostructure GaAs/AlGaAs distributed Bragg reflector surface emitting laser with very low threshold (5.2 mA) under room temperature CW conditions,” Japan. J. Appl. Phys., vol. 28, pp. L667-L668, Apr. 1989.
    • (1989) Japan. J. Appl. Phys. , vol.28 , pp. L667-L668
    • Ibariki, A.1    Kawashima, K.2    Furusawa, K.3    Ishikawa, T.4    Yamagushi, T.5    Niina, T.6
  • 10
    • 0019210727 scopus 로고
    • Ultrashort laser: Lasing in MBE GaAs layer with perpendicular-to-film optical excitation and emission
    • Dec.
    • A. Passner, H. M. Gibbs, A. C. Gossard, S. L. McCall, T. N. C. Venkatesan, and W. Wiegmann, “Ultrashort laser: Lasing in MBE GaAs layer with perpendicular-to-film optical excitation and emission,” IEEE J. Quantum Electron., vol. QE-16, pp. 1283–1285, Dec. 1980.
    • (1980) IEEE J. Quantum Electron. , vol.QE-16 , pp. 1283-1285
    • Passner, A.1    Gibbs, H.M.2    Gossard, A.C.3    McCall, S.L.4    Venkatesan, T.N.C.5    Wiegmann, W.6
  • 11
  • 15
    • 36549094975 scopus 로고
    • Transverse modes, waveguide dispersion and 30 ps recovery in submicron GaAs/AlAs microreson-ators
    • July
    • J. L. Jewell, S. L. McCall, A. Scherer, H. H. Houh, N. A. Whitaker, A. C. Gossard, and J. H. English, “Transverse modes, waveguide dispersion and 30 ps recovery in submicron GaAs/AlAs microreson-ators,” Appl. Phys. Lett., vol. 55, pp. 22–24, July 1989.
    • (1989) Appl. Phys. Lett. , vol.55 , pp. 22-24
    • Jewell, J.L.1    McCall, S.L.2    Scherer, A.3    Houh, H.H.4    Whitaker, N.A.5    Gossard, A.C.6    English, J.H.7
  • 17
    • 0024735880 scopus 로고
    • Room-temperature continuous wave vertical cavity single quantum well microlaser diodes
    • Sept.
    • Y. H. Lee, J. L. Jewell, A. Scherer, S. L. McCall, J. P. Harbison, and L. T. Florez, “Room-temperature continuous wave vertical cavity single quantum well microlaser diodes,” Electron. Lett., vol. 25, pp. 1377–1378, Sept. 1989.
    • (1989) Electron. Lett. , vol.25 , pp. 1377-1378
    • Lee, Y.H.1    Jewell, J.L.2    Scherer, A.3    McCall, S.L.4    Harbison, J.P.5    Florez, L.T.6
  • 19
    • 0001113986 scopus 로고
    • Fabrication of low threshold CW electrically pumped surface emitting microlasers
    • Dec.
    • A. Scherer, J. L. Jewell, J. P. Harbison, and L. T. Florez, Y. H. Lee, and C. J. Sandroff, “Fabrication of low threshold CW electrically pumped surface emitting microlasers,” Appl. Phys. Lett., vol. 55, pp. 2724–2726, Dec. 1989.
    • (1989) Appl. Phys. Lett. , vol.55 , pp. 2724-2726
    • Scherer, A.1    Jewell, J.L.2    Harbison, J.P.3    Florez, L.T.4    Lee, Y.H.5    Sandroff, C.J.6
  • 20
    • 0008935449 scopus 로고
    • Ultimate limit in low threshold quantum well GaAlAs semiconductor lasers
    • Jan.
    • K. Y. Lau, P. L. Derry, and A. Yariv, “Ultimate limit in low threshold quantum well GaAlAs semiconductor lasers,” Appl. Phys. Lett., vol. 52, pp. 88–90, Jan. 1988.
    • (1988) Appl. Phys. Lett. , vol.52 , pp. 88-90
    • Lau, K.Y.1    Derry, P.L.2    Yariv, A.3
  • 21
    • 0023164552 scopus 로고
    • New GaAlAs-GaAs surface emitting laser diodes with lateral pumping structure
    • Jan.
    • Y.-H. Wu, M. Ogura, M. Werner, and S. Wang, “New GaAlAs-GaAs surface emitting laser diodes with lateral pumping structure,” Electron. Lett., vol. 23, pp. 123–124, Jan. 1987.
    • (1987) Electron. Lett. , vol.23 , pp. 123-124
    • Wu, Y.-H.1    Ogura, M.2    Werner, M.3    Wang, S.4
  • 24
    • 0012758336 scopus 로고
    • Submilliamp threshold vertical-cavity laser diodes
    • Oct.
    • R. S. Geels and L. A. Coldren, “Submilliamp threshold vertical-cavity laser diodes,” Appl. Phys. Lett., vol. 57, pp. 1605–1607, Oct. 1990.
    • (1990) Appl. Phys. Lett. , vol.57 , pp. 1605-1607
    • Geels, R.S.1    Coldren, L.A.2
  • 26
    • 0025434501 scopus 로고
    • Top-surface-emitting GaAs four-quantum-well lasers emitting at 0.85 μm
    • May
    • Y. H. Lee, B. Tell, K. F. Brown-Goebeler, J. L. Jewell, and J. V. Hove, “Top-surface-emitting GaAs four-quantum-well lasers emitting at 0.85 μm,” Electron. Lett., vol. 26, pp. 710–711, May 1990.
    • (1990) Electron. Lett , vol.26 , pp. 710-711
    • Lee, Y.H.1    Tell, B.2    Brown-Goebeler, K.F.3    Jewell, J.L.4    Hove, J.V.5
  • 30
    • 0024772013 scopus 로고
    • Use of implant isolation for fabrication of vertical cavity surface-emitting laser diodes
    • Nov.
    • K. Tai, R. J. Fischer, K. W. Wang, S. N. G. Chu, and A. Y. Cho, “Use of implant isolation for fabrication of vertical cavity surface-emitting laser diodes,” Electron. Lett., vol. 25, pp. 1644–1645, Nov. 1989.
    • (1989) Electron. Lett. , vol.25 , pp. 1644-1645
    • Tai, K.1    Fischer, R.J.2    Wang, K.W.3    Chu, S.N.G.4    Cho, A.Y.5
  • 32
    • 0009072372 scopus 로고
    • High-finesse (Al, Ga)As interference filters grown by molecular beam epitaxy
    • Aug.
    • J. L. Jewell, Y. H. Lee, S. L. McCall, J. P. Harbison, and L. T. Florez, “High-finesse (Al,Ga)As interference filters grown by molecular beam epitaxy,” Appl. Phys. Lett., vol. 53, pp. 640–642, Aug. 1988.
    • (1988) Appl. Phys. Lett. , vol.53 , pp. 640-642
    • Jewell, J.L.1    Lee, Y.H.2    McCall, S.L.3    Harbison, J.P.4    Florez, L.T.5
  • 33
    • 3843103339 scopus 로고
    • High-power vertical-cavity surface-emitting AlGaAs/GaAs diode lasers
    • May
    • L. M. Zinkiewicz, T. J. Roth, L. J. Mawst, D. Tran, and D. Botez, “High-power vertical-cavity surface-emitting AlGaAs/GaAs diode lasers,” Appl. Phys. Lett., vol. 54, pp. 1959–1961, May 1989.
    • (1989) Appl. Phys. Lett. , vol.54 , pp. 1959-1961
    • Zinkiewicz, L.M.1    Roth, T.J.2    Mawst, L.J.3    Tran, D.4    Botez, D.5
  • 34
    • 36549097193 scopus 로고
    • Drastic reduction of series resistance in doped semiconductor distributed Bragg reflector for surface emitting lasers
    • June
    • K. Tai, L. Yang, Y. H. Wang, J. D. Wynn, and A. Y. Cho, “Drastic reduction of series resistance in doped semiconductor distributed Bragg reflector for surface emitting lasers,” Appl. Phys. Lett., vol. 56, pp. 2496–2498, June 1990.
    • (1990) Appl. Phys. Lett. , vol.56 , pp. 2496-2498
    • Tai, K.1    Yang, L.2    Wang, Y.H.3    Wynn, J.D.4    Cho, A.Y.5
  • 35
    • 0024715761 scopus 로고
    • Low-threshold-current-density vertical-cavity surface-emitting AlGaAs/GaAs diode lasers
    • Aug.
    • D. Botez, L. M. Zinkiewicz, T. J. Roth, L. J. Mawst, and G. Peterson, “Low-threshold-current-density vertical-cavity surface-emitting AlGaAs/GaAs diode lasers,” IEEE Photon. Technol. Lett., vol. 1, pp. 205–208, Aug. 1989.
    • (1989) IEEE Photon. Technol. Lett. , vol.1 , pp. 205-208
    • Botez, D.1    Zinkiewicz, L.M.2    Roth, T.J.3    Mawst, L.J.4    Peterson, G.5
  • 36
    • 36549100445 scopus 로고
    • Room-temperature continuous wave vertical cavity surface emitting GaAs injection lasers
    • Dec.
    • K. Tai, R. J. Fischer, C. W. Seabury, N. A. Olsson, T.-C. D. Huo, Y. Ota, and A. Y. Cho, “Room-temperature continuous wave vertical cavity surface emitting GaAs injection lasers,” Appl. Phys. Lett., vol. 55, pp. 2473–2475, Dec. 1989.
    • (1989) Appl. Phys. Lett. , vol.55 , pp. 2473-2475
    • Tai, K.1    Fischer, R.J.2    Seabury, C.W.3    Olsson, N.A.4    Huo, T.-C.D.5    Ota, Y.6    Cho, A.Y.7
  • 37
    • 0344835586 scopus 로고
    • Low-threshold vertical cavity surface-emitting lasers with metallic reflectors
    • July
    • E. F. Schubert, L. W. Tu, R. F. Kopf, G. J. Zydzik, and D. G. Deppe, “Low-threshold vertical cavity surface-emitting lasers with metallic reflectors,” Appl. Phys. Lett., vol. 57, pp. 117–119, July 1990.
    • (1990) Appl. Phys. Lett. , vol.57 , pp. 117-119
    • Schubert, E.F.1    Tu, L.W.2    Kopf, R.F.3    Zydzik, G.J.4    Deppe, D.G.5
  • 39
    • 36549095558 scopus 로고
    • Electronic passivation of GaAs surfaces through the formation of arsenic-sulfer bonds
    • C. J. Sandroff, M. S. Hedge, L. A. Farrow, C. C. Chang, and J. P. Harbison, “Electronic passivation of GaAs surfaces through the formation of arsenic-sulfer bonds,” Appl. Phys. Lett., vol. 54, pp. 362–364, 1989.
    • (1989) Appl. Phys. Lett. , vol.54 , pp. 362-364
    • Sandroff, C.J.1    Hedge, M.S.2    Farrow, L.A.3    Chang, C.C.4    Harbison, J.P.5
  • 40
    • 0342390097 scopus 로고
    • Optical measurement of surface recombination in InGaAs quantum well mesa structures
    • July
    • K. Tai, T. R. Hayes, S. L. McCall, and W. T. Tsang, “Optical measurement of surface recombination in InGaAs quantum well mesa structures,” Appl. Phys. Lett., vol. 53, pp. 302–303, July 1988.
    • (1988) Appl. Phys. Lett. , vol.53 , pp. 302-303
    • Tai, K.1    Hayes, T.R.2    McCall, S.L.3    Tsang, W.T.4
  • 41
    • 0025578906 scopus 로고
    • Spontaneous emission factor in micro-cavity DBR surface emitting laser
    • Amsterdam, the Netherlands, Sept., postdeadline Paper ThGl.3
    • T. Baba, T. Hamano, F. Koyama, and K. Iga, “Spontaneous emission factor in micro-cavity DBR surface emitting laser,” Euro. Conf. Opt. Commun., Amsterdam, the Netherlands, Sept. 1990, postdeadline Paper ThGl.3.
    • (1990) Euro. Conf. Opt. Commun.
    • Baba, T.1    Hamano, T.2    Koyama, F.3    Iga, K.4
  • 42
    • 84945717145 scopus 로고
    • Squeezing and cavity quantum electrodynamics in GaAs quantum well lasers
    • and, presented at the, Anaheim, CA, May, Paper QWC6
    • Y. Yamamoto, S. Machida, W. Richardson, K. Igeta, and G. Bjork, “Squeezing and cavity quantum electrodynamics in GaAs quantum well lasers,” presented at the Int. Quantum Electron. Conf., Anaheim, CA, May 1990, Paper QWC6.
    • (1990) Int. Quantum Electron. Conf.
    • Yamamoto, Y.1    Machida, S.2    Richardson, W.3    Igeta, K.4    Bjork, G.5
  • 43
    • 0001689175 scopus 로고
    • Inhibited and enhanced spontaneous emission from optically thin AlGaAs/GaAs double heterostructures
    • Nov.
    • E. Yablonovitch, T. J. Gmitter, and R. H. Bhat, “Inhibited and enhanced spontaneous emission from optically thin AlGaAs/GaAs double heterostructures,” Phys. Rev. Lett., vol. 61, pp. 2546–2549, Nov. 1988.
    • (1988) Phys. Rev. Lett. , vol.61 , pp. 2546-2549
    • Yablonovitch, E.1    Gmitter, T.J.2    Bhat, R.H.3
  • 44
    • 0011781424 scopus 로고
    • Light emitting devices based on the real-space transfer of hot electrons
    • Apr.
    • S. Luryi, “Light emitting devices based on the real-space transfer of hot electrons,” Appl. Phys. Lett., vol. 58, pp. 1727–1729, Apr. 1991.
    • (1991) Appl. Phys. Lett. , vol.58 , pp. 1727-1729
    • Luryi, S.1
  • 45
    • 0022029329 scopus 로고
    • GalnAsP/InP surface emitting laser (X = 1.4 μm, 77 K) with heteromultilayer Bragg reflector
    • Mar.
    • A. Chailertvanitkul, K. Iga, and K. Moriki, “GalnAsP/InP surface emitting laser (X = 1.4 μm, 77 K) with heteromultilayer Bragg reflector,” Electron. Lett., vol. 21, pp. 303–304, Mar. 1985.
    • (1985) Electron. Lett. , vol.21 , pp. 303-304
    • Chailertvanitkul, A.1    Iga, K.2    Moriki, K.3
  • 46
    • 36549101155 scopus 로고
    • Chemical beam epitaxially grown InP/InGaAsP interference mirror for use near 1.55 μm wavelength
    • Sept.
    • K. Tai, S. L. McCall, S. N. G. Chu, and W. T. Tsang, “Chemical beam epitaxially grown InP/InGaAsP interference mirror for use near 1.55 μm wavelength,” Appl. Phys. Lett., vol. 51, pp. 826–827, Sept. 1987.
    • (1987) Appl. Phys. Lett. , vol.51 , pp. 826-827
    • Tai, K.1    McCall, S.L.2    Chu, S.N.G.3    Tsang, W.T.4
  • 47
    • 84975538994 scopus 로고
    • Design of 1.3 pm GalnAsP surface emitting lasers for high bandwidth operation
    • May
    • P. A. Morton, D. L. Crawford, and J. E. Bowers, “Design of 1.3 pm GalnAsP surface emitting lasers for high bandwidth operation,” Opt. Lett., vol. 15, pp. 679–681, 1990.
    • (1990) Opt. Lett. , vol.15 , pp. 679-681
    • Morton, P.A.1    Crawford, D.L.2    Bowers, J.E.3
  • 50
    • 84945712016 scopus 로고
    • On the use of ‘downward-looking’ sources in MBE systems
    • Feb.
    • D. M. Collins, “On the use of ‘downward-looking’ sources in MBE systems,” J. Vac. Sci. Technol., vol. 20, pp. 250–251, Feb. 1982.
    • (1982) J. Vac. Sci. Technol. , vol.20 , pp. 250-251
    • Collins, D.M.1
  • 51
    • 0020748058 scopus 로고
    • Dynamics of film growth of GaAs by MBE from RHEED oscillations
    • J. H. Neave, B. A. Joyce, P. J. Dobson, and N. Norton, “Dynamics of film growth of GaAs by MBE from RHEED oscillations,” Appl. Phys. A, vol. 31, pp. 1–8, 1983.
    • (1983) Appl. Phys. A , vol.31 , pp. 1-8
    • Neave, J.H.1    Joyce, B.A.2    Dobson, P.J.3    Norton, N.4
  • 52
    • 0002270334 scopus 로고
    • Observation of reduced current thresholds in GaAs/AlGaAs vertical-cavity surface emitting lasers grown on 4° off-orientation (001) GaAs substrates
    • Oct. 15
    • Y. H. Wang, K. Tai, Y. F. Hsieh, S. N. G. Chu, J. D. Wynn, and A. Y. Cho, “Observation of reduced current thresholds in GaAs/AlGaAs vertical-cavity surface emitting lasers grown on 4° off-orientation (001) GaAs substrates,” Appl. Phys. Lett., vol. 57, pp. 1613–1615, Oct. 15, 1990.
    • (1990) Appl. Phys. Lett. , vol.57 , pp. 1613-1615
    • Wang, Y.H.1    Tai, K.2    Hsieh, Y.F.3    Chu, S.N.G.4    Wynn, J.D.5    Cho, A.Y.6
  • 53
    • 0000595114 scopus 로고
    • Electrical damage induced by ion beam etching of GaAs
    • Jan./Feb.
    • A. Scherer, H. G. Craighead, M. L. Roukes, and J. P. Harbison, “Electrical damage induced by ion beam etching of GaAs,” J. Vac. Sci. Technol., vol. B6, pp. 227–279, Jan./Feb. 1988.
    • (1988) J. Vac. Sci. Technol. , vol.B6 , pp. 227-279
    • Scherer, A.1    Craighead, H.G.2    Roukes, M.L.3    Harbison, J.P.4
  • 54
    • 0010180608 scopus 로고
    • Fabrication of small laterally patterned multiple quantum wells
    • A. Scherer and H. G. Craighead, “Fabrication of small laterally patterned multiple quantum wells,” Appl. Phys. Lett., vol. 49, pp. 1284–1286, 1986.
    • (1986) Appl. Phys. Lett. , vol.49 , pp. 1284-1286
    • Scherer, A.1    Craighead, H.G.2
  • 55
    • 0041188710 scopus 로고
    • GaAs and AlGaAs reactive ion etching in BCl3/Ar mixtures
    • A. Scherer, H. G. Craighead, and E. D. Beebe, “GaAs and AlGaAs reactive ion etching in BCl3/Ar mixtures,” J. Vac. Sci. Technol., vol. B5, p. 1599, 1987.
    • (1987) J. Vac. Sci. Technol. , vol.B5 , pp. 1599
    • Scherer, A.1    Craighead, H.G.2    Beebe, E.D.3
  • 57
    • 0020831703 scopus 로고
    • Large area ion beam assisted etching of GaAs with high etch rates and controlled anisotropy
    • G. A. Lincoln, M. W. Geis, S. Pang, and N. Efremow, “Large area ion beam assisted etching of GaAs with high etch rates and controlled anisotropy,” J. Vac. Sci. Technol., vol. B1, pp. 1043, 1983.
    • (1983) J. Vac. Sci. Technol. , vol.B1 , pp. 1043
    • Lincoln, G.A.1    Geis, M.W.2    Pang, S.3    Efremow, N.4
  • 59
    • 0021141148 scopus 로고
    • Effects of ion species and adsorbed gas on dry etching induced damage in GaAs
    • S. Pang, M. W. Geis, N. N. Efremow, and G. A. Lincoln, “Effects of ion species and adsorbed gas on dry etching induced damage in GaAs,” J. Vac. Sci. Technol., vol. B3, 398, 1985.
    • (1985) J. Vac. Sci. Technol. , vol.B3 , Issue.398
    • Pang, S.1    Geis, M.W.2    Efremow, N.N.3    Lincoln, G.A.4
  • 63
    • 84945713701 scopus 로고
    • see also, Anaheim, CA, May 21-25, Paper CTuF3; see also, Electron. Lett., Feb. 1991
    • see also, in Proc. Conf. Lasers Electro-Opt. (CLEO '90), Anaheim, CA, May 21-25, 1990, Paper CTuF3; see also, Electron. Lett., vol. 27, pp. 437–438, Feb. 1991.
    • (1990) Proc. Conf. Lasers Electro-Opt. (CLEO '90) , vol.27 , pp. 437-438
  • 65
    • 30244538212 scopus 로고
    • Microfabrication below 10 nm
    • Jan.
    • B. P. Van der Gaag and A. Scherer, “Microfabrication below 10 nm,” Appl. Phys. Lett., vol. 56, pp. 481–483, Jan. 1990.
    • (1990) Appl. Phys. Lett. , vol.56 , pp. 481-483
    • Van der Gaag, B.P.1    Scherer, A.2
  • 67
    • 0001362706 scopus 로고
    • InGaAs/AlGaAs strained single quantum well diode lasers with extremely low threshold current density and high efficiency
    • July
    • H. K. Choi and C. A. Wang, “InGaAs/AlGaAs strained single quantum well diode lasers with extremely low threshold current density and high efficiency,” Appl. Phys. Lett., vol. 57, pp. 321–323, July 1990.
    • (1990) Appl. Phys. Lett. , vol.57 , pp. 321-323
    • Choi, H.K.1    Wang, C.A.2
  • 71
    • 84945717150 scopus 로고    scopus 로고
    • private communication
    • Y. C. Chung, private communication.
    • Chung, Y.C.1
  • 72
    • 84945717151 scopus 로고    scopus 로고
    • private communication
    • J. C. Jeong, private communication.
    • Jeong, J.C.1


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