Heteroepitaxial growth of ceo2(001) films on si(001) substrates by pulsed laser deposition in ultrahigh vacuum

Japanese Journal of Applied Physics

Volumn 30, Issue 6, 1991, Pages L1136-L1138

  Nagata, Hirotoshi ^a   Tsukahara, Tadashi ^a   Gonda, Satoshi ^a   Yoshimoto, Mamoru ^a   Koinuma, Hideomi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

CeO2; Epitaxial film; Laser MBE; Lattice engineering; Si; SrTiO3

Indexed keywords

CRYSTALS - EPITAXIAL GROWTH; ELECTRONS - DIFFRACTION; LASER PULSES - APPLICATIONS; SEMICONDUCTING SILICON; STRONTIUM COMPOUNDS;

REFLECTION HIGH ENERGY ELECTRON DIFFRACTION;

CERIUM COMPOUNDS;

EID: 0026172330     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.30.L1136     Document Type: Article

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