Full-potential LMTO calculations for atomic relaxations at semiconductor-semiconductor interfaces

Physica B: Physics of Condensed Matter

Volumn 172, Issue 1-2, 1991, Pages 175-183

  Methfessel, M ^a   Scheffler, M ^a  

^a FRITZ HABER INSTITUT DER MAX PLANCK GESELLSCHAFT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; ELECTRONIC PROPERTIES; RELAXATION PROCESSES; ZINC SULFIDE;

LMTO CALCULATIONS; ZINC SELENIDE;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0026172207     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/0921-4526(91)90429-I     Document Type: Article

References (18)

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4. N.E. Christensen, I. Gorczyca, O.B. Christensen, U. Schmid and M. Cardona, J. Cryst. Growth, to be published.
5. Valence-band offset and interface formation in ZnTe/GaSb(110) studied by photoemission using synchrotron radiation
6. Electron correlation in semiconductors and insulators: Band gaps and quasiparticle energies