Application of Chemical Mechanical Polishing to the Fabrication of VLSI Circuit Interconnections

Journal of the Electrochemical Society

Volumn 138, Issue 6, 1991, Pages 1778-

  Patrick, William J ^a   Guthrie, William L ^a   Standley, Charles L ^a   Schiable, Paul M ^a  

^a IBM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUITS, VLSI - MATERIALS; SILICA - POLISHING;

CHEMICAL MECHANICAL POLISHING; SILICON DIOXIDE;

SEMICONDUCTING SILICON;

EID: 0026170357     PISSN: 00134651     EISSN: 19457111     Source Type: Journal    
DOI: 10.1149/1.2085872     Document Type: Article

References (8)

1. G. C. Schwartz, in “Reliability of Semiconductor Devices and Interconnection and Multilevel Metallization, Interconnection, and Contact Technologies,” H. Rathore, G. C. Schwartz, and R. Susko, Editors, PV 89–6, p. 493, The Electrochemical Society Softbound NJ (1989). Proceedings Series, Pennington,
2. H. Goto, T. Takada, R. Abe, Y. Kawabe, K. Oami, and M. Tanaka, IEDM, Tech. Digest, 58 (1982).
3. T. Hamaguchi, N. Endo, M. Kimura, and M. Nakamae, Tech. Digest, 688 (1985).
4. T. Kubota, T. Ishijima, M. Sakao, K. Terada, T. Hamaguchi, and H. Kitajima, Tech. Digest, 344 (1987).
5. J. Griffin, M. Spencer, G. Harris, and J. Comas, IEEE Trans, Electron Devices, ED-31,1096 (1984).
6. K. Beyer, W. Guthrie, S. Makarewicz, E. Mendel, W. Patrick, K. Perry, W. Pliskin, J. Riseman, P. Schiable, and C. Standley, U.S. Pat. 4,944,836 (1990).
7. J. Koucky and M. Matusek, Glass Technol., 25, 240 (1984).
8. G. C. Schwartz, in “ULSI Science and Technology 1987,” S. Broydo and C. M. Osburn, Editors PV 87-11, p. 493, The Electrochemical Society Softbound Proceedings Series, Pennington, NJ (1987).