Trench DMOS transistor technology for high-current (100 A range) switching

Solid State Electronics

Volumn 34, Issue 5, 1991, Pages 493-507

  Bulucea, Constantin ^a   Rossen, Rebecca ^a  

^a Siliconix Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC PROPERTIES; SEMICONDUCTOR DEVICES, MOS; SWITCHING SYSTEMS;

TRENCH DMOS TRANSISTOR TECHNOLOGY;

TRANSISTORS;

EID: 0026158322     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(91)90153-P     Document Type: Article

References (24)

1. Proc. 16th Int. Conf. Solid-State Devices Mater.
2. A new vertical power MOSFET structure with extremely reduced on-resistance
3. An ultra-low on-resistance power MOSFET fabricated by using a fully self-aligned process
4. 2
5. PISCES-2B-Two-Dimensional Device Analysis Program
6. The Oxidation of Shaped Silicon Surfaces
7. Nonplanar oxidation and reduction of oxide leakage currents at silicon corners by rounding-off oxidation
8. Walkout in p-n junctions including charge trapping saturation
9. The COMFET—A new high conductance MOS-gated device
10. Switching speed enhancement in insulated gate transistors by electron irradiation