Hole Confinement in Mos-Gated GeXSi1-x/Si Heterostructures

IEEE Electron Device Letters

Volumn 12, Issue 5, 1991, Pages 230-232

  Garone, P M ^a   Venkataraman, V ^a   Sturm, J C ^a  

^a PRINCETON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON;

HOLE CONFINEMENT; MOS-GATED HETEROSTRUCTURES;

SEMICONDUCTOR DEVICES, MOS;

EID: 0026157461     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.79566     Document Type: Article

References (5)

1. D. Nayak, J. C. S. Woo, J. S. Park, K. L. Wang, and K. P. Macwilliams, “Modulation doped p-channel GexSi1-x MOSFET,” presented at the 1990 Device Research Conf., Santa Barbara, CA.
2. S. S. Iyer et al, “Si/SiGe metal oxide semiconductor devices,” presented at the 1990 Device Research Conf., Santa Barbara, CA.
3. J. M. Hinckley, V. Sankaran, and J. Singh, “Charged carrier transport in Si1-xGex pseudomorphic alloys matched to Si- strain-related transport improvements,” Appl. Phys. Lett., vol. 55, no. 19, p. 2008, 1989.
4. C. G. Van de Walle and R. H. Martin, “Theoretical calculations of heterojunction discontinuities in the Si/Ge system,” Phys. Rev. B., vol. 15, p. 5621, 1986.
5. J. C. Sturm, P. V. Schwartz, and P. M. Garone, “Silicon temperature measurement by infrared transmission for rapid thermal processing applications,” Appl. Phys. Lett., vol. 56, no. 10, p. 961, 1989.