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Volumn 38, Issue 5, 1991, Pages 1069-1076

An Abuttable CCD Imager for Visible and X-Ray Focal Plane Arrays

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICES, CHARGE COUPLED; SPECTROSCOPY, X-RAY;

EID: 0026156868     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.78381     Document Type: Article
Times cited : (167)

References (16)
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    • J. R. Tower et al., “Shortwave infrared 512 × 2 line sensor for earth resources applications,” IEEE Trans. Electron Devices, vol. ED-32, pp. 1574–1583, Aug. 1985.
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  • 5
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    • 420 × 420 charge-coupled device imager and four-chip hybrid focal plane
    • Sept.
    • B. E. Burke, R. W. Mountain, P. J. Daniels, and D. C. Harrison, “420 × 420 charge-coupled device imager and four-chip hybrid focal plane,” Opt. Eng., vol. 26, pp. 890–968, Sept. 1987.
    • (1987) Opt. Eng , vol.26 , pp. 890-968
    • Burke, B.E.1    Mountain, R.W.2    Daniels, P.J.3    Harrison, D.C.4
  • 6
    • 0024927147 scopus 로고
    • An abbuttable CCD imager for visible and X-ray focal plane arrays
    • Feb.
    • B. E. Burke, et al., “An abbuttable CCD imager for visible and X-ray focal plane arrays,” in ISCC Dig. Tech. Papers, Feb. 1989, pp. 94–95.
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    • Burke, B.E.1
  • 8
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    • X-ray imaging with a charge-coupled device fabricated on a high-resistivity silicon substrate
    • July
    • M. C. Peckerar, D. H. McCann, and L. Yu, “X-ray imaging with a charge-coupled device fabricated on a high-resistivity silicon substrate,” Appl. Phys. Lett., vol. 39, pp. 55–57, July 1981.
    • (1981) Appl. Phys. Lett , vol.39 , pp. 55-57
    • Peckerar, M.C.1    McCann, D.H.2    Yu, L.3
  • 9
    • 0022435637 scopus 로고
    • A deep-depletion CCD imager for soft X-ray, visible, and near-infrared sensing
    • Aug.
    • H.-Y. Tsoi J. P. Ellul, M. I. King, J. J. White, and W. C. Bradley, “A deep-depletion CCD imager for soft X-ray, visible, and near-infrared sensing,” IEEE Trans. Electron Devices, vol. ED-32, 1525–1530, Aug. 1985.
    • (1985) IEEE Trans. Electron Devices , vol.ED-32 , pp. 1525-1530
    • Tsoi, H.-Y.1    Ellul, J.P.2    King, M.I.3    White, J.J.4    Bradley, W.C.5
  • 10
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    • Noise in buried channel charge-coupled devices
    • Feb.
    • R. W. Brodersen and S. P. Emmons, “Noise in buried channel charge-coupled devices,” IEEE J. Solid-State Circuits, vol. SC-11, pp. 147–155, Feb. 1976.
    • (1976) IEEE J. Solid-State Circuits , vol.SC-11 , pp. 147-155
    • Brodersen, R.W.1    Emmons, S.P.2
  • 11
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    • Theoretical study of a channel-doped separate gate Si MOSFET (SG-MOSFET) by two-dimensional computer simulation
    • Jan.
    • K. Yamaguchi, S. Takahashi, and H. Kodera, “Theoretical study of a channel-doped separate gate Si MOSFET (SG-MOSFET) by two-dimensional computer simulation,” IEEE Trans. Electron Devices, vol. ED-28, pp. 117–120, Jan. 1981.
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  • 12
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  • 14
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    • Low-noise operation in buried-channel MOSFET's
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    • Watanabe, T.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.