BCMD—An Improved Photosite Structure for High-Density Image Sensors

IEEE Transactions on Electron Devices

Volumn 38, Issue 5, 1991, Pages 1011-1020

  Hynecek, Jaroslav ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUITS, CMOS; LOGIC CIRCUITS, TRANSISTOR TRANSISTOR; SEMICONDUCTOR DEVICES, MOS; TRANSISTORS, FIELD EFFECT;

BULK CHARGE MODULATED DEVICES; HIGH-DENSITY IMAGE SENSORS; MOS TRANSISTORS; PHOTOSITE STRUCTURES;

IMAGE SENSORS;

EID: 0026155736     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.78373     Document Type: Article

References (6)

1. T. Nakamura, K. Matsumoto, R. Hyuga, and A. Yusa, “A new MOS image sensor operating in a non-destructive readout mode,” in IEDM Tech. Dig., Dec. 1986, pp. 353–356.
2. N. Tanaka et at., “A 310 pixel bipolar imager (BASIS),” IEEE Trans. Electron Devices, vol. 37, pp. 964–971, Apr. 1990.
3. J. Hynecek, “A new device architecture suitable for high-resolution and high-performance image sensors,” IEEE Trans. Electron Device, vol. 35, pp. 646–652, May 1988.
4. ——, “Analysis of the photosite reset in FGA image sensors,” IEEE Trans. Electron Devices, vol. 37, pp. 2193–2200, Oct. 1990.
5. A. Van der Ziel, Noise in Solid State Devices and Circuits. New York: Wiley, 1986.
6. J. Hynecek, “Virtual phase CCD technology,” in IEDM Tech. Dig., Dec. 1979, pp. 611–614.