메뉴 건너뛰기




Volumn 38, Issue 5, 1991, Pages 1206-1216

CCD On-Chip Amplifiers: Noise Performance versus MOS Transistor Dimensions

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS; SEMICONDUCTOR DEVICES, MOS; TRANSISTORS, FIELD EFFECT;

EID: 0026154081     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.78399     Document Type: Article
Times cited : (36)

References (17)
  • 1
    • 0015346884 scopus 로고
    • Noise sources in charge-coupled devices
    • June
    • J. E. Carnes and W. F. Kosonocky, “Noise sources in charge-coupled devices,” RCA Rev., vol. 33, pp. 327–343, June 1972.
    • (1972) RCA Rev , vol.33 , pp. 327-343
    • Carnes, J.E.1    Kosonocky, W.F.2
  • 2
    • 0016437850 scopus 로고
    • Imaging devices using the charge-coupled concept
    • Jan.
    • D. F. Barbe, “Imaging devices using the charge-coupled concept,” Proc. IEEE, pp. 38–67, Jan. 1975.
    • (1975) Proc. IEEE , pp. 38-67
    • Barbe, D.F.1
  • 3
    • 0011106120 scopus 로고
    • Design and performance of a low-noise charge detection amplifier for VPCCD devices
    • Dec.
    • J. Hynecek, “Design and performance of a low-noise charge detection amplifier for VPCCD devices,” IEEE Trans. Electron Devices, vol. ED-31, no. 12, pp. 1713–1719, Dec. 1984.
    • (1984) IEEE Trans. Electron Devices , vol.ED-31 , Issue.12 , pp. 1713-1719
    • Hynecek, J.1
  • 4
    • 0022733931 scopus 로고
    • High-resolution 8-mm CCD image sensor with correlated clamp sample and hold charge detection circuit
    • June
    • ——, “High-resolution 8-mm CCD image sensor with correlated clamp sample and hold charge detection circuit,” IEEE Trans. Electron Devices, vol. ED-33, no. 6, pp. 850–862, June 1986.
    • (1986) IEEE Trans. Electron Devices , vol.ED-33 , Issue.6 , pp. 850-862
  • 5
    • 0022435515 scopus 로고
    • Low-noise CCD signal recovery
    • Aug.
    • P. A. Levine, “Low-noise CCD signal recovery,” IEEE Trans. Electron Devices, vol. ED-32, no. 8, pp. 1534–1537, Aug. 1985.
    • (1985) IEEE Trans. Electron Devices , vol.ED-32 , Issue.8 , pp. 1534-1537
    • Levine, P.A.1
  • 6
    • 0024718241 scopus 로고
    • A new noise suppression method for high-definition CCD cameras
    • Dec.
    • M. Ohbo et al., “A new noise suppression method for high-definition CCD cameras,” IEEE Trans. Consumer Electronics, vol. 35, no. 3, pp. 368–374, Dec. 1989.
    • (1989) IEEE Trans. Consumer Electronics , vol.35 , Issue.3 , pp. 368-374
    • Ohbo, M.1
  • 7
    • 84939742574 scopus 로고
    • CCD signal processing for better signal to noise ratio
    • Philips, Eindhoven, The Netherlands, TN180-88, May
    • P. G. M. Centen, “CCD signal processing for better signal to noise ratio,” Philips, Eindhoven, The Netherlands, TN180-88, May 1988.
    • (1988)
    • Centen, P.G.M.1
  • 8
    • 0022435452 scopus 로고
    • A CCD image sensor with 768 × 490 pixel
    • Aug.
    • E. Oda et al., “A CCD image sensor with 768 × 490 pixel,” IEEE Trans. Electron Devices, vol. ED-32, no. 8, pp. 1457-1461, Aug. 1985.
    • (1985) IEEE Trans. Electron Devices , vol.ED-32 , Issue.8 , pp. 1457-1461
    • Oda, E.1
  • 9
    • 4243907857 scopus 로고
    • A low noise CCD output amplifier
    • R. J. Brewer, “A low noise CCD output amplifier,” in IEDM Tech. Dig., 1978, pp. 610–612.
    • (1978) IEDM Tech. Dig , pp. 610-612
    • Brewer, R.J.1
  • 10
    • 0023591465 scopus 로고
    • A high sensitivity output amplifier for CCD image sensor
    • Y. Matsunaga, “A high sensitivity output amplifier for CCD image sensor,” in IEDM Tech. Dig., 1987, pp. 116–119.
    • (1987) IEDM Tech. Dig , pp. 116-119
    • Matsunaga, Y.1
  • 11
    • 0024918795 scopus 로고
    • New low noise output amplifier for high defintion CCD image sensor
    • N. Mutoh et al., “New low noise output amplifier for high defintion CCD image sensor,” in IEDM Tech Dig., 1989, pp. 173–176.
    • (1989) IEDM Tech Dig , pp. 173-176
    • Mutoh, N.1
  • 12
    • 0018031115 scopus 로고
    • Dual-gate charge sensing in charge-coupled devices
    • Nov.
    • G. S. Hobson et al., “Dual-gate charge sensing in charge-coupled devices,” IEEE Trans. Electron Devices, vol. ED-2, no. 6, pp. 207–214, Nov. 1978.
    • (1978) IEEE Trans. Electron Devices , vol.ED-2 , Issue.6 , pp. 207-214
    • Hobson, G.S.1
  • 13
    • 0015316077 scopus 로고
    • FET noise sources and their effects on amplifier performance at low frequencies
    • Mar.
    • M. B. Das, “FET noise sources and their effects on amplifier performance at low frequencies,” IEEE Trans. Electron Devices, vol. ED-19, no. 3, pp. 338–348, Mar. 1972.
    • (1972) IEEE Trans. Electron Devices , vol.ED-19 , Issue.3 , pp. 338-348
    • Das, M.B.1
  • 14
    • 84930556245 scopus 로고
    • The effects of fixed bulk charge on the thermal noise in metal-oxide-semiconductor transistors
    • Apr.
    • C. T. Sah et al., “The effects of fixed bulk charge on the thermal noise in metal-oxide-semiconductor transistors,” IEEE Trans. Electron Devices, vol. ED-13, no. 4, pp. 410–414, Apr. 1966.
    • (1966) IEEE Trans. Electron Devices , vol.ED-13 , Issue.4 , pp. 410-414
    • Sah, C.T.1
  • 15
    • 41549140115 scopus 로고
    • A computation of the high-frequency noise quantities of a MOSFET
    • F. M. Klaassen, “A computation of the high-frequency noise quantities of a MOSFET,” Philips Res. Rep., vol. 24, pp. 559–571, 1969.
    • (1969) Philips Res. Rep , vol.24 , pp. 559-571
    • Klaassen, F.M.1
  • 16
    • 0019565629 scopus 로고
    • Hot electron noise effects in buried channel MOSFET's
    • S. K. Kim et al., “Hot electron noise effects in buried channel MOSFET's,” Solid-State Electron., vol. 24, pp. 425–428, 1981.
    • (1981) Solid-State Electron , vol.24 , pp. 425-428
    • Kim, S.K.1
  • 17
    • 84939769577 scopus 로고
    • MOS FET equivalent circuit at pinch-off
    • Sept.
    • D. H. Treleaven and F. N. Trofimenkoff, “MOS FET equivalent circuit at pinch-off,” IEEE Proc. Lett., pp. 1223–1224, Sept. 1966.
    • (1966) IEEE Proc. Lett , pp. 1223-1224
    • Treleaven, D.H.1    Trofimenkoff, F.N.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.