-
1
-
-
0002740547
-
Ultraclean technology: ULSI processing crucial factor
-
Oct
-
T. Ohmi, “Ultraclean technology: ULSI processing crucial factor,” Microcontamination, vol. 6, no. 10, pp. 49-58, Oct. 1988.
-
(1988)
Microcontamination
, vol.6
, Issue.10
, pp. 49-58
-
-
Ohmi, T.1
-
2
-
-
0342685004
-
Removal of metallic deposits by high-frequency currents
-
Sept
-
J. K. Robertson and C. W. Clapp, “Removal of metallic deposits by high-frequency currents,” Nature, vol. 132, pp. 479–480, Sept. 23, 1933.
-
(1933)
Nature
, vol.132
, pp. 479-480
-
-
Robertson, J.K.1
Clapp, C.W.2
-
3
-
-
84934187075
-
Dependences of magnetron-sputtered SiO2film properties on argon pressure
-
Nov
-
T. Yachi and T. Serikawa, “Dependences of magnetron-sputtered SiO2film properties on argon pressure,” Solid State Technol., vol. 131, no. 11, pp. 2720–2722, Nov. 1984.
-
(1984)
Solid State Technol.
, vol.131
, Issue.11
, pp. 2720-2722
-
-
Yachi, T.1
Serikawa, T.2
-
4
-
-
84941860853
-
Si substrate damage induced by plasma radiation
-
Tokyo, Japan, Oct
-
M. Yoneda, K. Kawai, N. Fujiwara, and K. Nishioka, “Si substrate damage induced by plasma radiation,” in Proc. 11th Symp. Dry Process Program, Tokyo, Japan, Oct. 30, 1989, pp. 69–73.
-
(1989)
Proc. 11th Symp. Dry Process Program
, pp. 69-73
-
-
Yoneda, M.1
Kawai, K.2
Fujiwara, N.3
Nishioka, K.4
-
5
-
-
0022044448
-
Reduction of radiation damage on silicon substrates in magnetron reactive ion etching
-
K. Hirobe and H. Azuma, “Reduction of radiation damage on silicon substrates in magnetron reactive ion etching,” J. Electrochem. Soc., vol. 132, no. 4, pp. 934–942, 1985.
-
(1985)
J. Electrochem. Soc.
, vol.132
, Issue.4
, pp. 934-942
-
-
Hirobe, K.1
Azuma, H.2
-
6
-
-
84941865668
-
Influence of surface contamination on crystal and SiO2defects
-
Nov
-
Y. Matsushita, “Influence of surface contamination on crystal and SiO2defects,” in Proc. 1st Workshop on ULSI Ultraclean Technol., Nov. 11, 1989, 1–29.
-
(1989)
Proc. 1st Workshop on ULSI Ultraclean Technol.
, pp. 1-29
-
-
Matsushita, Y.1
-
7
-
-
0021160801
-
Low-energy high flux reactive ion etching by RF magnetron plasma
-
Jan. 15
-
L. I. D. C. Hinson, W. H. Class, and R. L. Sandstrom, “Low-energy high flux reactive ion etching by RF magnetron plasma,” Appl. Phys. Lett., vol. 44, no. 2, pp. 185–187, Jan. 15, 1984.
-
(1984)
Appl. Phys. Lett.
, vol.44
, Issue.2
, pp. 185-187
-
-
Hinson, L.I.D.C.1
Class, W.H.2
Sandstrom, R.L.3
-
8
-
-
33750637253
-
Down-flow process in VLSI manufacturing
-
Tokyo, Japan, S-IIIB-1
-
H. Okano, H. Hayasaka, H. Nishino, K. Horioka, and T. Arikado, “Down-flow process in VLSI manufacturing,” Extended Abstracts of 20th Conf. Solid State Devices and Materials, Tokyo, Japan, S-IIIB-1, 1988, pp. 549–552.
-
(1988)
Extended Abstracts of 20th Conf. Solid State Devices and Materials
, pp. 549-552
-
-
Okano, H.1
Hayasaka, H.2
Nishino, H.3
Horioka, K.4
Arikado, T.5
-
10
-
-
0001215937
-
Formation of device-grade epitaxial silicon films at extremely low temperatures by low-energy bias sputtering
-
Nov
-
T. Ohmi, T. Ichikawa, H. Iwabuchi, and T. Shibata, “Formation of device-grade epitaxial silicon films at extremely low temperatures by low-energy bias sputtering,” J. Appl. Phys., vol. 66, no. 10, pp. 4756–4766, Nov. 1989.
-
(1989)
J. Appl. Phys.
, vol.66
, Issue.10
, pp. 4756-4766
-
-
Ohmi, T.1
Ichikawa, T.2
Iwabuchi, H.3
Shibata, T.4
-
11
-
-
0015625660
-
Shape of cathode dark space of a sputtering plasma determined from probe measurements
-
May
-
W. R. Larson, C. W. Wilmsen, and P. W. Chan, “Shape of cathode dark space of a sputtering plasma determined from probe measurements,” J. Appl. Phys., vol. 44, no. 5, pp. 2153–2156, May 1973.
-
(1973)
J. Appl. Phys.
, vol.44
, Issue.5
, pp. 2153-2156
-
-
Larson, W.R.1
Wilmsen, C.W.2
Chan, P.W.3
-
12
-
-
0022045243
-
Measurement of plasma presheath
-
Apr
-
S. Meassick, M. H. Cho, and N. Hershkowitz, “Measurement of plasma presheath,” IEEE Trans. Plasma Science, vol. PS-13, no. 2, pp. 115–119, Apr. 1985.
-
(1985)
IEEE Trans. Plasma Science
, vol.PS-13
, Issue.2
, pp. 115-119
-
-
Meassick, S.1
Cho, M.H.2
Hershkowitz, N.3
-
13
-
-
4243625498
-
Super clean room system—Ultra clean technology for submicron LSI fabrication
-
S. Broydo and C. M. Osburn, Eds
-
T. Ohmi, N. Mikoshiba, and K. Tubouchi, “Super clean room system—Ultra clean technology for submicron LSI fabrication,” ULSI Science and Technology/1987, S. Broydo and C. M. Osburn, Eds., Proc. Electrochem. Soc., vol. 87, no. 11, 761–785, 1988.
-
(1988)
ULSI Science and Technology/1987, Proc. Electrochem. Soc
, vol.87
, Issue.11
, pp. 761-785
-
-
Ohmi, T.1
Mikoshiba, N.2
Tubouchi, K.3
-
15
-
-
65449153204
-
-
Tokyo: Uchida Rokakuho, (in Japanese)
-
N. Teii, Purazuma Kiso Kogaku. Tokyo: Uchida Rokakuho, 1986 (in Japanese).
-
(1986)
Purazuma Kiso Kogaku
-
-
Teii, N.1
-
16
-
-
84941860145
-
-
Tokyo: Kindai Kagaku, ch. 3 (in Japanese)
-
Y. Hatta, Kitai Hoden. Tokyo: Kindai Kagaku, 1987, ch. 3 (in Japanese).
-
(1987)
Kitai Hoden
-
-
Hatta, Y.1
-
20
-
-
0342851715
-
Capacitive probes for RF process plasmas
-
Nov
-
S. E. Savas and K. G. Donohoe, “Capacitive probes for RF process plasmas,” Reviews of Scientific Instruments, vol. 66, no. 11, pp. 3391–3395, Nov. 1989.
-
(1989)
Reviews of Scientific Instruments
, vol.66
, Issue.1
, pp. 3391-3395
-
-
Savas, S.E.1
Donohoe, K.G.2
-
21
-
-
0021412115
-
Etching characteristics of n+ poly-Si and A1 employing a magnetron plasma
-
Apr
-
H. Okano, Y. Horiike, T. Yamazaki, and T. Tokura, “Etching characteristics of n+ poly-Si and A1 employing a magnetron plasma,” Jpn. J. Appl. Phys., vol. 23, no. 4, pp. 482–486, Apr. 1984.
-
(1984)
Jpn. J. Appl. Phys.
, vol.23
, Issue.4
, pp. 482-486
-
-
Okano, H.1
Horiike, Y.2
Yamazaki, T.3
Tokura, T.4
-
23
-
-
84957233192
-
Frequency effects in plasma etching
-
May/June
-
D. L. Flamm, “Frequency effects in plasma etching,” J. Vac. Sci. Technol., vol. A4, no. 3, pp. 729–738, May/June 1986.
-
(1986)
J. Vac. Sci. Technol.
, vol.4A
, Issue.3
, pp. 729-738
-
-
Flamm, D.L.1
-
24
-
-
0042850776
-
Electrical characterization of radio-frequency sputtering gas discharge
-
J. S. Logan, N. M. Mazza, and P. D. Davidse, “Electrical characterization of radio-frequency sputtering gas discharge,” J. Vac. Sci. Technol., vol. 6, no. 1, pp. 120–123, 1969.
-
(1969)
J. Vac. Sci. Technol.
, vol.6
, Issue.1
, pp. 120-123
-
-
Logan, J.S.1
Mazza, N.M.2
Davidse, P.D.3
-
26
-
-
36549102085
-
Frequency dependence of ion bombardment of grounded surfaces in RF argon glow discharges in a planar system
-
Nov
-
K. Köhler, D. E. Home, and J. W. Coburn, “Frequency dependence of ion bombardment of grounded surfaces in RF argon glow discharges in a planar system,” J. Appl. Phys., vol. 58, no. 9, pp. 3350–3355, Nov. 1985.
-
(1985)
J. Appl. Phys.
, vol.58
, Issue.9
, pp. 3350-3355
-
-
Köhler, K.1
Home, D.E.2
Coburn, J.W.3
-
27
-
-
36049053689
-
Calculation of ion bombarding energy and its distribution in RF sputtering
-
Apr
-
R. T. C. Tsui, “Calculation of ion bombarding energy and its distribution in RF sputtering,” Physical Review., vol. 168, no. 1, pp. 107–113, Apr. 1968.
-
(1968)
Physical Review
, vol.168
, Issue.1
, pp. 107-113
-
-
Tsui, R.T.C.1
-
30
-
-
0003699033
-
-
Reading, MA: Addison-Wesley
-
R. P. Feynman, R. B. Leighton, and M. Sands, The Feynman Lectures on Physics. Reading, MA: Addison-Wesley, 1977, pp. 10.7-10.9.
-
(1977)
The Feynman Lectures on Physics
, pp. 10.7-10.9
-
-
Feynman, R.P.1
Leighton, R.B.2
Sands, M.3
-
31
-
-
0004540894
-
Dielectric thin films through RF sputtering
-
Feb
-
P. D. Davidse and L. I. Maissel, “Dielectric thin films through RF sputtering,” J. Appl. Phys., vol. 37, no. 2, pp. 574–479, Feb. 1966.
-
(1966)
J. Appl. Phys.
, vol.37
, Issue.2
, pp. 479-574
-
-
Davidse, P.D.1
Maissel, L.I.2
-
32
-
-
0001553898
-
Sputtering of dielectrics by high-frequency fields
-
Oct
-
G. S. Anderson, W. N. Mayer, and G. K. Wehner, “Sputtering of dielectrics by high-frequency fields,” J. Appl. Phys., vol. 33, no. 10, pp. 2991–2992, Oct. 1962.
-
(1962)
J. Appl. Phys.
, vol.33
, Issue.10
, pp. 2991-2992
-
-
Anderson, G.S.1
Mayer, W.N.2
Wehner, G.K.3
-
33
-
-
36149066927
-
A radio frequency dielectric sputtering system with non-grounded electrodes
-
Jan
-
L. Holland, T. Putner, and G. N. Jackson, “A radio frequency dielectric sputtering system with non-grounded electrodes,” J. Scientific Instruments, vol. 2, no. 1, pp. 32–34, Jan. 1968.
-
(1968)
J. Scientific Instruments
, vol.2
, Issue.1
, pp. 32-34
-
-
Holland, L.1
Putner, T.2
Jackson, G.N.3
-
34
-
-
0025401129
-
Formation of high quality pure aluminum films by low kinetic energy particle bombardment
-
Mar
-
T. Ohmi, H. Kuwabara, S. Saito, and T. Shibata, “Formation of high quality pure aluminum films by low kinetic energy particle bombardment,” J. Electrochem. Soc., vol. 137, no. 3, pp. 1008–1016, Mar. 1990.
-
(1990)
J. Electrochem. Soc.
, vol.137
, Issue.3
, pp. 1008-1016
-
-
Ohmi, T.1
Kuwabara, H.2
Saito, S.3
Shibata, T.4
-
35
-
-
36549096467
-
Room temperature copper metallization for ultralarge-scale integrated circuits by a low kinetic-energy particle process
-
June
-
T. Ohmi, T. Saito, T. Shibata, and T. Nitta, “Room temperature copper metallization for ultralarge-scale integrated circuits by a low kinetic-energy particle process,” Appl. Phys. Letters, vol. 52, no. 26, pp. 2236–2238, June 1988.
-
(1988)
Appl. Phys. Letters
, vol.52
, Issue.26
, pp. 2236-2238
-
-
Ohmi, T.1
Saito, T.2
Shibata, T.3
Nitta, T.4
-
36
-
-
84941865459
-
Proposal for advanced semiconductor manufacturing equipment—An approach to automated IC manufacturing—
-
Holly-wood, Abstract. Oct
-
T. Ohmi, “Proposal for advanced semiconductor manufacturing equipment—An approach to automated IC manufacturing—,” Extended Abstracts, 176th Electrochemical Society Meeting, Holly-wood, Abstract no. 337, Oct. 1989, pp. 484–485.
-
(1989)
Extended Abstracts, 176th Electrochemical Society Meeting
, Issue.337
, pp. 484-485
-
-
Ohmi, T.1
-
37
-
-
0022890777
-
Double-source excited reactive ion etching and its application to submicron trench etching
-
Tokyo, Japan
-
M. Sato and Y. Arito, “Double-source excited reactive ion etching and its application to submicron trench etching,” Extended Abstracts, 18th Conf. Solid State Devices and Materials, Tokyo, Japan, 1986, pp. 233–236.
-
(1986)
Extended Abstracts, 18th Conf. Solid State Devices and Materials
, pp. 233-236
-
-
Sato, M.1
Arito, Y.2
-
38
-
-
0025462188
-
Preparation of Cubic Boron Nitride Films by Sputtering
-
July
-
M. Mieno and T. Yoshida, “Preparation of Cubic Boron Nitride Films by Sputtering,” Jpn. J. Appl. Phys., vol. 29, no. 7, pp. L1175—L1177, July 1990.
-
(1990)
Jpn. J. Appl. Phys.
, vol.29
, Issue.7
, pp. L1175-L1177
-
-
Mieno, M.1
Yoshida, T.2
|