Physical Understanding and Optimum Design of High-Power Millimeter-Wave Pulsed Impatt Diodes

IEEE Electron Device Letters

Volumn 12, Issue 5, 1991, Pages 221-223

  Rolland, P A ^a   Dalle, C ^a   Friscourt, M R ^a  

^a UNIV LILLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING SILICON;

HIGH-POWER DIODES; PULSED DIODES; SILICON DIODES;

SEMICONDUCTOR DIODES, IMPATT;

EID: 0026154032     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.79563     Document Type: Article

References (8)

1. C. Dalle, P. A. Rolland, and G. Lieti, “Flat doping profile double-drift silicon IMPATT for reliable CW high-power high-efficiency generation in the 94-GHz window,” IEEE Trans. Electron Devices, vol. 37, 1, pp. 227–236, Jan. 1990.
2. E. Kasper and J. F. Luy, “State of the art and future trends in silicon IMPATT diodes for mm-wave seeker requirements,” in MM-90 Conf. Proc, pp. 293–298.
3. P. A. Rolland, “Two terminal devices in millimeter range: Physical analysis and new trends,” in Proc. 20th European Microwave Conf. ‘Budapest, Hungary’, Sept. 10-13, 1990.
4. T. Misawa, “Negative resistance in PN junctions under avalanche breakdown conditions. Part I,” IEEE Trans. Electron Devices, vol. ED-13, pp. 137–143, 1966.
5. M. Claassen and W. Harth, “Large-signal operation of PIN IMPATT diodes for pulsed oscillators and millimeter-wave frequencies,” Electron. Lett., vol. 18, pp. 737–739, Aug. 17, 1982.
6. W. Behr and J. F. Luy, “High-power operation mode of pulsed IMPATT diodes,” IEEE Electron Device Lett., vol. 11, pp. 206–208, May 1990.
7. J. F. Luy, “IMPATT operation below the avalanche frequency,” Electron. Lett., vol. 26, pp. 1960–1962, Nov. 1990.
8. C. Dalle and P. A. Rolland, “Drift-diffusion model versus energy model for millimeter-wave IMPATT diodes modelling,” Int. J. Numerical Modelling: Electronic Networks, Devices and Fields, vol. 2, pp. 61–73, 1989.