Influence of Mosfet I-V Characteristics on Switching Delay Time of Cmos Inverters After Hot-Carrier Stress

IEEE Electron Device Letters

Volumn 12, Issue 5, 1991, Pages 238-240

  Wang, Qin ^a   Krautschneider, Wolfgang H ^a   Weber, Werner ^a   Schmitt Landsiedel, Doris ^a  

^a SIEMENS AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUITS, CMOS; SEMICONDUCTOR DEVICES, MOSFET;

CMOS INVERTERS; HOT CARRIERS; INVERTER DEGRADATION;

ELECTRIC INVERTERS;

EID: 0026154031     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.79569     Document Type: Article

References (6)

1. W. Weber, L. Risch, W. Krautschneider, and Q. Wang, “Hot-carrier degradation of CMOS-inverters,” in IEDM Tech. Dig., 1988, pp. 208–211.
2. J. Winnerl, A. Lill, D. Schmitt-Landsiedel, M. Orlowski, and F. Neppl, “Influence of transistor degradation on CMOS performance and impact on lifetime criterion,” IEDM Tech. Dig., 1988, pp. 204–207.
3. W. Weber, Q. Wang, M. Brox, and D. Schmitt-Landsiedel, “Hot-carrier degradation effects relevant in real operation of MOSFET's,” in Proc. 22nd Conf. Solid State Devices and Materials ‘Sendai, Japan’, 1990, pp. 295-298.
4. A. Schwerin, W. Hänsch, and W. Weber, “The relationship between oxide charge and device degradation: A comparative study of n- and p-channel MOSFET's,” IEEE Trans. Electron Devices, vol. ED-34, pp. 2493–2500, 1987.
5. H. C. Pao and C. T. Sah, “Effects of diffusion current on characteristics of metal-oxide‘insulator’-semiconductor transistors ‘MOST’,” Solid-State Electron., vol. 9, pp. 927–930, 1966.
6. Q. Wang, M. Brox, W. Krautschneider, and W. Weber, “Explanation and model for the logarithmic time dependence of p-MOSFET degradation,” IEEE Electron Device Lett., vol. 12, pp. 218–220, May 1991.