Utilization of Plasma Hydrogenation in Stacked Sram'S with Poly-Si Pmosfet'S and Bulk-Si Nmosfet'S

IEEE Electron Device Letters

Volumn 12, Issue 5, 1991, Pages 233-235

  Rodder, Mark ^a   Aur, Shian ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

PLASMAS - HYDROGENATION; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICES, MOSFET;

N-MOSFET; P-MOSFET; POLYSILICON; SRAM;

DATA STORAGE, DIGITAL;

EID: 0026153708     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.79567     Document Type: Article

References (10)

1. Y. Uemoto, E. Fujii, A. Nakamura, and K. Senda, “A high-performance stacked-CMOS SRAM cell by solid phase growth technique,” in Symp. VLSI Technol., June 1990, p. 21.
2. G. P. Pollack et al., “Hydrogen passivation of polysilicon MOSFET's from a plasma nitride source,” IEEE Electron Device Lett., vol. EDL-5, no. 11, p. 468, 1984.
3. T. I. Kamins and Marcoux, “Hydrogenation of transistors fabricated in polycrystalline-silicon films,” IEEE Electron Device Lett., vol. EDL-1, no. 8, p. 159, Aug. 1980.
4. R. B. Fair and R. C. Sun, “Threshold voltage instability in MOSFET's due to channel hot-hole emission,” IEEE Trans. Electron Devices, vol. ED-28, no. 1, p. 83, Jan. 1981.
5. R. Eklund et al., “A 0.5 micron BiCMOS technology for logic and 4Mbit-class SRAM's,” in IEDM Tech. Dig., Dec. 1989, p. 425.
6. T. Horiuchi, H. Mikoshiba, K. Nakamura, and K. Hamano, “A simple method to evaluate device lifetime due to hot-carrier effect under dynamic stress,” IEEE Electron Device Lett., vol. EDL-7, no. 6, p. 337, June 1986.
7. A. Yoshida and Y. Ushiku, “Hot carrier induced degradation mode depending on the LDD structure in NMOSFET's,” in IEDM Tech. Dig., Dec. 1987, p. 42.
8. S. Yoshida et al., “Improvement of endurance to hot carrier degradation by hydrogen blocking P-SiO,” in IEDM Tech. Dig., Dec. 1988, p. 22.
9. B. J. Fishbein, J. T. Watt, and J. D. Plummer, “Time resolved annealing of interface traps in polysilicon gate metal-oxide-semiconductor capacitors,” J. Electrochem. Soc, p. 674, Mar. 1987.
10. M. Rodder and D. A. Antoniadis, “Comparison of different techniques for passivation of small-grain polycrystalline-Si MOSFET's,” IEEE Electron Device Lett., vol. EDL-6, no. 11, p. 570, Nov. 1985.