Suppression of latch in SOI MOSFETs by silicidation of source

Electronics Letters

Volumn 27, Issue 11, 1991, Pages 1003-1005

  Mcdaid, L J ^a   Hall, S ^a   Eccleston, W ^a   Alderman, J C ^b  

^a UNIVERSITY OF LIVERPOOL   (United Kingdom)

^b UNIVERSITY COLLEGE CORK   (Ireland)

Author keywords

Field effect transistors; Semiconductor devices and materials; Transistors

Indexed keywords

ELECTRIC BREAKDOWN; SEMICONDUCTING SILICON--CHARGE CARRIERS; SEMICONDUCTOR DEVICES, MOSFET;

SILICIDATION; SOI MOSFET;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0026152717     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19910625     Document Type: Article

References (4)

1. Chen, C.-E.D., Matloubian, M., Sundaresan, R., Mao, B.-Y., Wei, C.C., and Pollack, G.P.: ‘Single-transistor latch in SOI 's’, IEEE Electron Dev. Lett., 1988, EDL-9, (12), p. 636
2. Mcdaid, L.J., Hall, S., Marsland, J.S., Eccleston, W., Alderman, J.C., Cook, K.R., Bunyan, R.J.T., and Uren, M.J.: ‘A simple model to predict the holding voltage for SOI MOSFETs operating in the latched state’ 1990, IEEE SOS/SOI Technology Conf. Proc., Key West, Florida, October 1990, pp. 19-20
3. Mcdaid, L.J., Hall, S., Eccleston, W., and Alderman, J.C.: ‘The influence of substrate bias and fixed charge in the buried insulator on the gain of the parasitic bipolar inherent in silicon-on-insulator MOSFETs’. Institute of Physics, Proc. of ESSDERC, Nottingham, Sept. 1990
4. Mcdaid, L.J., Hall, S., Eccleston, W., Watkinson, P., and Alderman, J.C.: ‘The influence of emitter efficiency on single transistor latch in silicon-on-insulator MOSFETs’. 1990 IEEE SOS/SOI Technology Conf. Proc., Key West, Florida, October 1990, pp. 141-142