A Model for Charge Transfer in Buried-Channel Charge-Coupled Devices at Low Temperature

IEEE Transactions on Electron Devices

Volumn 38, Issue 5, 1991, Pages 1162-1174

  Banghart, Edmund K ^a   Lavine, James P ^a   Trabka, Eugene A ^a   Nelson, Edward T ^a   Burkey, Bruce C ^a  

^a EASTMAN KODAK COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

IMAGE SENSORS; INFRARED DETECTORS; SEMICONDUCTING SILICON--CHARGE CARRIERS; SEMICONDUCTOR DEVICES, CHARGE COUPLED;

BURIED-CHANNEL CCD; IR IMAGE SENSORS;

SEMICONDUCTOR DEVICES, CHARGE COUPLED;

EID: 0026152433     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.78394     Document Type: Article

References (39)

1. W. S. Boyle and G. E. Smith, “Charge coupled semiconductor devices,” Bell Syst. Tech. J., vol. 49, pp. 587–593, 1970.
2. F. D. Sheperd and A. C. Yang, “Silicon Schottky retinas for infrared imaging,” in IEDM Tech. Dig., pp. 310–313, Dec. 1973.
3. W. F. Kosonocky, F. V. Shalicross, T. S. Villani, and J. V. Groppe, “160 × 244 element PtSi Schottky-barrier IR-CCD image sensor,” IEEE Trans. Electron Devices, vol. ED-32, no. 8, pp. 1564–1573, Aug. 1985. T. S. Villani, W. F. Kosonocky, F. V. Shalicross, J. V. Groppe, G. M. Meray, J. J. O'Neill, III, and B. J. Esposito, “Construction and performance of a 320 × 244-element IR-CCD imager with PtSi Schottky-barrier detectors,” Infrared Detectors, Focal Plane Arrays, and Imaging Sensors (Proc. SPIE), vol. 1107, pp. 9–21, 1989.
4. M. Kimata, M. Denda, N. Yutani, S. Iwade, and N. Tsubouchi, “A 512 × 512-element PtSi Schottky-barrier infrared image sensor,” IEEE J. Solid-State Circuits, vol. SC-22, no. 6, pp. 1124–1129, Dec. 1987.
5. R. H. Walden, R. H. Krambeck, R. J. Strain, J. McKenna, N. L. Schryer, and G. E. Smith, “The buried channel charge coupled device,” Bell Syst. Tech. J., vol. 51, pp. 1635–1640, 1972.
6. A. J. Steckl, R. D. Nelson, B. T. French, R. G. Gudmundsen, and D. Schechter, “Application of charge-coupled devices to infrared detection and imaging,” Proc. IEEE, vol. 63, no. 1, pp. 67–74, Jan. 1975.
7. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. New York, NY: Wiley,1981.
8. J. Frenkel, “On pre-breakdown phenomena in insulators and electronic semiconductors,” Phys. Rev., vol. 54, pp. 647–648, 1938.
9. W. Shockley and W. T. Read, “Statistics of therecombination of holes and electrons,” Phys. Rev., vol. 87, pp. 835–842, 1952.
10. R, N. Hall, “Electron-hole recombination in germanium,” Phys. Rev., vol. 87, p. 387, 1952.
11. A. K. Jonscher, “Electronic properties of amorphous dielectric films,” Thin Film Solids, vol. 1, pp. 213–234, 1967.
12. J. L. Hartke, “The three-dimensional Poole-Frenkel effect,” J. Appl. Phys., vol. 39, pp. 4871–4873, 1968.
13. E. T. Nelson, K. Y. Wong, S. Yoshizumi, D. Rockafellow, W. DesJardin, M. Elzinga, J. P. Lavine, T. J. Tredwell, R. P. Khosla, P. Sorlie, B. Howe, S. Brickman, and S. Refermat, “Wide field of view PtSi infrared focal plane array,” in Infrared Detectors and Focal Plane Arrays (Proc. SPIE), E. L. Dereniak and R. E. Sampson, Eds. vol. 1308, pp. 36–44, 1990.
14. M. Lax, “Giant traps,” J. Phys. Chem. Solids, vol. 8, pp. 66–73, 1959.
15. N. S. Saks and A. Nordbryhn, “Time dependence of depletion region formation in phosphorus-doped silicon MOS devices at cryogenic temperatures,” J. Appl. Phys., vol. 50, no. 11, pp.6962–6968, Nov. 1979.
16. E. Rosencher, V. Mosser, and G. Vincent, “Transient-current study of field-assisted emission from shallow levels in silicon,” Phys. Rev. B, vol.29, no. 3, pp. 1135–1147, Feb. 1984.
17. C. H. Chan and S. G. Chamberlain, “Numerical methods for the charge transfer analysis of charge-coupled devices,” Solid-State Electron., vol. 17, pp. 491–499, 1974.
18. W. E. Engeler, J. J. Tiemann, and R. D. Baertsch, “Surface charge transport in silicon,” Appl. Phys. Lett., vol. 17, pp. 469–472, Dec. 1970.
19. J. E. Carnes, W. F. Kosonocky, and E. G. Ramberg, “Free charge transfer in charge-coupled devices,” IEEE Trans. Electron Devices, vol. ED-19, no. 6, pp. 798–808, June 1972.
20. D. F. Barbe, “Imaging devices using the charge-coupled concept,” Proc. IEEE, vol. 63, no. 1, pp.38–67, Jan. 1975.
21. M. G. Collet and L. J. M. Esser, “Charge transfer devices,” Adv. Solid State Phys., vol. 13, pp. 337–358, 1973.
22. C.-K. Kim and M. Lenzlinger, “Charge transfer in charge-coupled devices,” J. Appl. Phys., vol. 42, no. 9, pp. 3586–3594, Aug. 1971.
23. A. K. Henning, N. N. Chan, J. T. Watt, and J. D. Plummer,“Substrate current at cryogenic temperatures: Measurements and a two-dimensional model for CMOS technology,” IEEE Trans. Electron Devices, vol. ED-34, no. 1, pp. 64–74, Jan.1987.
24. B. C. Burkey, G. Lubberts, E. A. Trabka, and T. J. Tredwell, “Channel potential and channel width in narrow buried-channel MOSFET's,” IEEE Trans. Electron Devices, vol. ED-31, no. 4, pp. 423–429, Apr. 1984.
25. M. Kimata, M. Denda, N. Yutani, N. Tsubouchi, and S. Uematsu, “Low-temperature characteristics of buried-channel charge-coupled devices,”Japan. J. Appl. Phys., vol. 22, no. 6, pp. 975–980, June 1983.
26. M. Kimata, M. Denda, N. Yutani, S. Iwade, and N. Tsubouchi, “Low-temperature characteristics of buried channel charge-coupled devices (BCCD),” J. Electron. Commun. Soc., vol. J68-C, no. 12, pp. 998–1005, 1985.
27. S. M. Sze and J. C. Irwin, “Resistivity, mobility, and impurity levels in GaAs, Ge, and Si at 300°K,” Solid-State Electron., vol. 11, pp. 599–602, 1968.
28. G. L. Miller, D. V. Lang, and L. C. Kimerling, Ann. Rev. Sci., pp. 377–448, 1977.
29. E. L. Ince, Ordinary Differential Equations. New York: Dover, 1956, pp. 311–312.
30. M. Martini and T. A. McMath, “Field dependence of the capture and re-emission of charge carriers by shallow levels in germanium and silicon,” Solid-State Electron., vol. 16, pp. 129–142, 1973.
31. S. R. Dhariwal and P. T. Landsberg, “A theoretical study of field-enhanced emission(Poole-Frenkel effect),” J. Phys. Chem. Solids, vol. 50, no.4, pp. 363–368, 1989.
32. E. Trabka, B. Burkey, and J. Lavine,“Calculation of electrostatic potentials in charge-coupled devices using hermite orthogonal collocation,” presented at the Custom Integrated Circuits Conf., Rochester, NY, May 23–25, 1979.
33. M. G. Collet, “The influence of bulk traps on the charge-transfer inefficiency of bulk charge-coupled devices,” IEEE Trans. Electron Devices, vol. ED-23, no. 2, pp. 224–227, Feb. 1976.
34. V. N. Abakumov, V. I. Perel', and I. N. Yassievich, “Capture of carriers by attractive centers in semiconductors (review),” Sov. Phys.—Semicond., vol. 12, no. 1, pp. 1–18, Jan. 1978.
35. R. A. Brown and S. Rodriguez, “Low-temperature recombination of electrons and donors in n-type germanium and silicon,” Phys. Rev., vol. 153, no. 3, pp. 890–900, Jan. 1967.
36. R. S. Levitt and A. Honig, “Low temperature electron trapping lifetimes and extrinsic photoconductivity in n-type silicon doped with shallow impurities,” J. Phys. Chem. Solids, vol. 22, pp. 269–284, 1961.
37. P. Norton, T. Braggins, and H. Levinstein, “Recombination of electrons at ionized donors in silicon at low temperature,” Phys. Rev. Lett., vol. 30, no. 11, 488–489, Mar. 1973.
38. G. L. Pearson and J. Bardeen, “Electrical properties of pure silicon and silicon alloys containing boron and phosphorus,” Phys. Rev., vol. 75, no. 5, pp. 865–883, Mar. 1949.
39. R. B. M. Girisch, R. P. Mertens, and O. B. Verbeke, “Energy-gap change in silicon n-type inversion layers at low temperature,” Solid-State Electron., vol. 33, no. 1, pp. 85–91, 1990.