A mechanism of the sidewall process induced junction leakage current of ldd structure

Journal of the Electrochemical Society

Volumn 138, Issue 5, 1991, Pages 1439-1443

  Onishi, Shigeo ^a   Ayukawa, Akitsu ^a   Tanaka, Kenichi ^a   Sakiyama, Keizo ^a  

^a SHARP CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALS - DEFECTS; SEMICONDUCTOR DEVICES, MOSFET - JUNCTIONS; SEMICONDUCTOR MATERIALS - DOPING;

JUNCTION LEAKAGE CURRENT; LIGHTLY DOPED DRAIN;

SEMICONDUCTING SILICON;

EID: 0026151653     PISSN: 00134651     EISSN: 19457111     Source Type: Journal    
DOI: 10.1149/1.2085803     Document Type: Article

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