Computer Simulation of a Carbon-Deposition Plasma in ch4

IEEE Transactions on Plasma Science

Volumn 19, Issue 2, 1991, Pages 270-277

  Rhallabi, A ^a   Catherine, Y ^a  

^a Inst de Phys et Chim des Mat   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; IONS; MASS SPECTROMETRY; MOLECULES;

STICKING COEFFICIENT;

PLASMAS;

EID: 0026139881     PISSN: 00933813     EISSN: 19399375     Source Type: Journal    
DOI: 10.1109/27.106824     Document Type: Article

References (39)

1. S. M. Ohja, H. Norstrom, and D. McCulluch, “The growth kinetics and properties of hard and insulating carbonaceous films grown in an RF discharge,” Thin Solid Films, vol. 60, pp. 213–225, 1979.
2. C. Weissmantel, “Ion-based growth of special films: Techniques and mechanisms,” Thin Solid Films, vol. 92, 55–63, 1982.
3. A. Bubenzer, B. Dischler, G. Brandt, and P. Koidl, “RF plasma-deposited amorphous hydrogenated hard carbon thin films: Preparation, properties, and applications,” J. Appl. Phys., vol. 54, pp. 4590–4595, 1983.
4. Y. Catherine, “Deposition of amorphous hydrogenated carbon films in low and high frequency discharges,” Mat. Sci. Forum, vols. 52/53, pp. 175–196, 1989.
5. D. Edelson and D. Flamm, “Computer simulation of a CF 4 plasma etching silicon,” J. Appl. Phys., vol. 56, pp. 1522–1531, 1984.
6. L. E. Kline, W. D. Part low, and W. E. Bies, “Electron and chemical kinetics in methane RF glow-discharge deposition plasmas,” J. Appl. Phys., vol. 65, 70–78, 1989.
7. M. J. Kushner, “A phenomenological model for surface deposition kinetics during plasma and sputter deposition of amorphous hydrogenated silicon,” J. Appl. Phys., vol. 62, 4763–4772, 1987.
8. K. Tachibana, M. Nishida, H. Harima, and Y. Urano, “Diagnostics and modeling of a methane plasma used in the chemical vapor deposition of amorphous carbon films,” J. Appl. Phys. D, vol. 17, pp. 1727–1742, 1984.
9. D. J. Economou, S. K. Park, and G. D. Williams, “Uniformity of etching in parallel plate plasma reactors,” J. Electrochem. Soc., vol. 136, 188–198, 1989.
10. T. A. Cleland and D. W. Hess, “Diagnostic and modeling of N 2 o RF glow discharges,” J. Electrochem. Soc., vol. 136, pp. 3103–3111, 1989.
11. G. R. Misium, A. J. Lichtenberg, and M. A. Lieberman, “Macroscopic modeling of radio-frequency plasma discharges,” J. Vac. Sci. Technol., vol. A7, pp. 1007–1012, 1989.
12. M. J. Kushner, “A plasma chemistry and surface model for the deposition of a-Si:H from RF glow discharges: A study of hydrogen content,” in Mat. Res. Soc. Symp. Proc., Plasma Process., J. W. Coburn, R. A. Gottscho, and D. W. Hess, Eds., 1986, vol. 68, pp. 293–307.
13. E. Zawaideh and N. S. Kim, “A generalized plasma etching model,” J. Appl. Phys., vol. 64, 4199–4207, 1988.
14. S. J. Harris, “Gas phase kinetics during diamond growth: CH 4 as growth species,” J. Appl. Phys., vol. 65, pp. 3044–3048, 1989.
15. H. F. Winters, “Dissociation of methane by electron impact,” J. Chem. Phys., vol. 63, pp. 3462–3466, 1975.
16. D. Rapp and P. Englander-Golden, “Total cross sections for ionization and attachment in gases by electron impact, I: Positive ionization,” J. Chem. Phys., vol. 43, pp. 1464–1479, 1965.
17. C. E. Melton and P. S. Rudolph, “Radiolysis of methane in a wide-range range radiolysis source of a mass spectrometer, I: Individual and total cross sections for the production of positive ions, negative ions, and free radicals by electrons,” J. Chem. Phys., vol. 47, pp. 1771– 1 774, 1967.
18. M. J. Kushner and A. Garscadden, “Important considerations for optimizing production rates in RF discharge chemistry, in Proc. Gas. Dielectric Conf. (Knoxville, TN), 1987, L. G. Christophorou and D. W. Bouldin, Eds. New York: Pergamon, 1987, pp. 334–342.
19. P. J. Chantry, “A simple formula for diffusion calculations involving wall reflection and low density,” J. Appl. Phys., vol. 6 2, pp. 1141–1148, 1987.
20. E. McDaniel, Collision Phenomena in Ionised Gases. New York: Wiley, 1964, 715pp.
21. H. Toyoda, H. Kojima, and H. Sugai, “Observation of CH 2 radical and comparison with CH 3 radical in a RF methane discharge, Appl. Phys. Lett., vol. 13, pp. 1292–1294, 1989.
22. M. J. McCaughey and M. J. Kushner, “Production of disilane and silyl sticking coefficients during plasma-enhanced chemical vapor deposition of hydrogenated amorphous silicon,” Appl. Phys. Lett., vol. 54, pp. 1642–1 6 44, 1989.
23. J. Perrin, Y. Yakeda, N. Hirano, Y. Takeuchi, and A. Matsuda, “Sticking and recombination of the SiH 3 radical on hydrogenated amorphous silicon: The catalytic effect of diborane,” Surface Sci., vol. 210, pp. 114–128, 1989.
24. M. J. Cooke and G. Harris, “Monte Carlo simulation of thin-film deposition in a rectangular groove,” J. Vac. Sci. Technol., vol. A7, pp. 3217–3221, 1989.
25. C. Bourreau, Y. Catherine, and P. Garcia, “Glow discharge deposition of silicon dioxide and aluminum oxide films: A kinetic model of the surface processes,” Plasma Chem. Plasma Process., vol. 10, 247–260, 1990.
26. H. Kersten and G. M. W. Kroesen, “On the temperature dependence of the deposition rate of amorphous hydrogenated carbon films,” J. Vac. Sci. Technol., vol. A8, pp. 38–42, 1990.
27. H. Toyoda, H. Kojima, and H. Sugai, “Mass spectroscopic investigation of the CH 3 radicals in a methane RF discharge,” Appl. Phys. Lett., vol. 54, pp. 1507–1509, 1989.
28. S. A. Studniarz and J. L. Franklin, “Ion-molecule reactions in a 50 MHz discharge,” J. Chem. Phys., vol. 49, pp. 2652–2659, 1968.
29. G. Turban, Y. Catherine, and B. Grolleau, “Reactions mechanisms of the radiofrequency glow discharge process in silane-helium,” Thin Solid Films, vol. B60, pp. 147–155, 1979.
30. R. Robertson and A. Gallagher, “Mono and disilicon radicals in silane and silane argon dc discharges,” J. Appl. Phys., vol. 59, pp. 3402–3411, 1986.
31. P. Sigmund, “Sputtering by ion bombardment: Theoretical concepts,” in Sputtering by Particle Bombardment, vol. I (Topics in Applied Physics, vol. 47), R. Behrish, Ed. Berlin: Springer—Verlag, 1981, pp. 9–71.
32. Y. Catherine and P. Couderc, “Electrical characteristics and growth kinetics in discharges used for plasma deposition of amorphous carbon,” Thin Solid Films, vol. 144, pp. 265–280, 1986.
33. A. Pastol, “Caracterisation de plasmas de methane. Aplication au dépôt de couches minces de carbone amorphe hydrogene,” thesis, Univ. Nantes, 1989.
34. Y. Catherine and A. Pastol, “Ion flux measurements in discharges used for amorphous carbon film deposition,” in E-MRS Meet. Proc. (Strasbourg), P. Koidl and P. Oelhafen, Eds., vol. XVII, pp. 145–151. Paris: Les Editions de Physique, 1987.
35. J. J. Pouch, S. A. Alterovitz, and J. D. Warner, “Auger electron spectroscopy: Secondary ion mass spectrometry and optical characterization of a-C:H and BN films,” NASA, Washington, DC, Tech. Memo. 87–258, 1986.
36. Y. Catherine, P. Couderc, and A. Zamouche, “Depot de films minces de carbone amorphe hydrogene par décharge RF dans les melanges CH 4 —He et C 2 H 4 —He,” in Proc. CIP ‘82 (Nice), 1982, Suppt Le Vide Les Couches Minces, no. 212, pp. 125–129, 1982.
37. V. Polunin, P. P. Stanchula, A. A. Andreev, and B. T. Melekh, “Growth rate and properties of amorphous carbon layers produced in low temperature plasma,” Izv. Akad. Nauk SSSR, Neorg. Mat., vol. 22, pp. 1288–1291, 1986.
38. M. Morin, “Controle du depot de films de carbone amorphe hydrogene en plasma multipolaire microonde,” thesis, Univ. d’Orleans, 1989.
39. V. A. Godyak and A. S. Khanneh, “Ion bombardment secondary electron maintenance of steady RF discharge,” IEEE Trans. Plasma Sci., vol. PS-14 pp. 112–123, 1986.