On the peculiarities of the short-time (tg < 10 ms) solid solution LPE growth onto the moving substrate

Journal of Crystal Growth

Volumn 110, Issue 4, 1991, Pages 955-959

  Garbuzov, D Z ^a   Zhuravkevich, E V ^a   Zhmakin, A I ^a   Makarov, Yu N ^a   Ovchinnikov, A V ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALS - EPITAXIAL GROWTH; SOLID SOLUTIONS;

LIQUID PHASE EPITAXY; MOVING SUBSTRATE;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0026139220     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(91)90656-P     Document Type: Letter

References (11)

1. Confined-carrier luminescence of a thin In1−xGaxP1−zAsz well (x∼0.13, z∼0.29, ∼400 Å) in an InP p-n junction
2. Compositional inhomogeneity of liquid phase epitaxial InGaPAs layers observed directly in photoluminescence
3. Electron microscopy at atomic resolution