Role of atomic hydrogen during growth of hydrogenated amorphous silicon in the “chemical annealing”

Japanese Journal of Applied Physics

Volumn 30, Issue 4B, 1991, Pages L679-L682

  Shirai, Hajime ^a   Hanna, Jun Ichi ^a   Shimizu, Isamu ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

A Si:H; Alternate deposition; Atomic deuterium; Atomic hydrogen; Chemical annealing; Post hydrogenation; Si network; SIMS

Indexed keywords

HYDROGEN; SEMICONDUCTING SILICON; SILANES;

AMORPHOUS HYDROGENATED SILICON; ATOMIC DEUTERIUM; ATOMIC HYDROGEN; CHEMICAL ANNEALING;

SEMICONDUCTING FILMS;

EID: 0026137657     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.30.L679     Document Type: Article

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