Estimation of Heat Transfer in SOI-MOSFET’s

IEEE Transactions on Electron Devices

Volumn 38, Issue 4, 1991, Pages 871-875

  Chai, Zhiqin ^b  

^a UNIVERSITY OF DUISBURG ESSEN   (Germany)

^b FRAUNHOFER INSTITUTE FOR MICROELECTRONIC CIRCUITS AND SYSTEMS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUITS, VLSI--DESIGN; SEMICONDUCTOR DEVICES--SEMICONDUCTOR INSULATOR BOUNDARIES; SUBSTRATES;

HEAT FLOW; SILICON-ON-INSULATOR MOSFETS; SIMOX WAFERS; VLSI DESIGN;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0026137501     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.75217     Document Type: Article

References (7)

1. J. Belz et al., “Characterization of CMOS devices and circuits built on SIMOX-substrates,” in Proc. 4th Int. Symp. on Silicon-on-Insulator on-Insulator Technology and Devices (Quebec, May 1990).
2. O. Le Neel and M. Haond, “Electrical transient study of negative resistance in SOI MOS transistors,” Electron. Lett., vol. 26, no. 1, 74–76, Jan. 1990.
3. L. J. McDaid et al., “Physical origin of negative differential resistance in SOI transistors,” Electron. Lett., vol. 25, no. 13, pp. 827–828, June 1989.
4. J. Belz et al., “High quality silicon-on-insulator substrates by implanted oxygen ions,” Mater. Sci. Eng., vol. B4, pp. 429–433, 1989.
5. R. Constapel and M. Berger, “A multigrid approach for device simulation using local linearization,” in Proc. NASECODE VI (Dublin, Ireland, 1989).
6. U. Grigull et al., Die Grundgesetze der Waermeuebertragung. Berlin: Springer, 1963, p. 282.
7. P. R. Gray and R. G. Meyer, Analysis and Design of Analog Integrated Circuits. New York: Wiley, 1977, pp. 83–84.