8·2 GHz bandwidth monolithic integrated optoelectronic receiver using msm photodiode and 0·5 µm recessed-gate AIGaAs/GaAs HEMTs

Electronics Letters

Volumn 27, Issue 9, 1991, Pages 734-735

  Hurm, V ^a   Rosenzweig, J ^a   Ludwig, M ^a   Benz, W ^a   Berroth, M ^a   Huelsmann, A ^a   Kaufel, F ^a   Koehler, H ^a   Raynor, B ^a   Schneider, J ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

Optical communication; Optoelectronics; Receivers

Indexed keywords

INTEGRATED CIRCUITS, MONOLITHIC; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DIODES, PHOTODIODE; SIGNAL RECEIVERS; TRANSISTORS, FIELD EFFECT;

HEMT; OPTOELECTRONIC RECEIVERS;

OPTOELECTRONIC DEVICES;

EID: 0026135798     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19910456     Document Type: Article

References (6)

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2. Hamaguchi, H., Makiuchi, M., Kumai, T., and Wada, O.: ‘GaAs optoelectronic integrated receiver with high-output fast-response characteristics’, IEEE Electron Dev. Lett., 1987, EDL-8, pp. 39–41
3. 1−x As pulse-doped double heterostructure for device application’. Proc. of the 17th Int. Symp. on gallium arsenide and related compounds, Jersey, UK, 1990, pp. 521–526
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6. Roth, W., Schumacher, H., Kluge, J., Geelen, H. J., and Beneking, H.: ‘The DSI diode-a fast large-area optoelectronic detector’, IEEE Trans., 1985, ED-32, pp. 1034–1036