메뉴 건너뛰기




Volumn 26, Issue 3, 1991, Pages 415-421

AlInAs/GaInAs HBT IC Technology

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING ALUMINUM COMPOUNDS - APPLICATIONS; SEMICONDUCTING GALLIUM ARSENIDE - APPLICATIONS; SEMICONDUCTING INDIUM COMPOUNDS - APPLICATIONS; SEMICONDUCTOR DEVICES - HETEROJUNCTIONS; TRANSISTORS, BIPOLAR - APPLICATIONS;

EID: 0026120927     PISSN: 00189200     EISSN: 1558173X     Source Type: Journal    
DOI: 10.1109/4.75028     Document Type: Article
Times cited : (24)

References (15)
  • 1
    • 0019918412 scopus 로고
    • Heterostructure bipolar transistors and integrated circuits
    • H. Kroemer, “Heterostructure bipolar transistors and integrated circuits,” Proc. IEEE, vol. 70, p. 13, 1982.
    • (1982) Proc. IEEE , vol.70 , pp. 13
    • Kroemer, H.1
  • 2
    • 0024752681 scopus 로고
    • GaAlAs/GaAs heterojunction bipolar transistors: Issues and prospects for application
    • Oct.
    • P. M. Asbeck et al., “GaAlAs/GaAs heterojunction bipolar transistors: Issues and prospects for application,” IEEE Trans. Electron Devices, vol. 36, no. 10, pp. 2032–2042, Oct. 1989.
    • (1989) IEEE Trans. Electron Devices , vol.36 , Issue.10 , pp. 2032-2042
    • Asbeck, P.M.1
  • 3
    • 0023998254 scopus 로고
    • A possible near-ballistic collection on AlGaAs/GaAs HBT with a modified collector structure
    • T. Ishibashi and Y. Yamauchi, “A possible near-ballistic collection on AlGaAs/GaAs HBT with a modified collector structure,” IEEE Trans. Electron Devices, vol. 35, p. 401, 1988.
    • (1988) IEEE Trans. Electron Devices , vol.35 , pp. 401
    • Ishibashi, T.1    Yamauchi, Y.2
  • 4
    • 0024752976 scopus 로고
    • Heterojunction bipolar transistors using Si-Ge alloys
    • Oct.
    • S. S. Iyer et al., “Heterojunction bipolar transistors using Si-Ge alloys,” IEEE Trans. Electron Devices, vol. 36, no. 10, pp. 2043–2063, Oct. 1989.
    • (1989) IEEE Trans. Electron Devices , vol.36 , Issue.10 , pp. 2043-2063
    • Iyer, S.S.1
  • 5
    • 0025591832 scopus 로고
    • AlInAs/GaInAs HBT IC technology
    • (Boston, MA), May
    • J. F. Jensen et al., “AlInAs/GaInAs HBT IC technology,” in Custom Integrated Circuits Conf. Tech. Dig. (Boston, MA), May 13–16, 1990, pp. 18.2.1-18.2.4.
    • (1990) Custom Integrated Circuits Conf. Tech. Dig , pp. 13-16
    • Jensen, J.F.1
  • 6
    • 0024917164 scopus 로고
    • InP-based heterostructure bipolar transistors
    • (San Diego, CA)
    • R. N. Nottenburg et al., “InP-based heterostructure bipolar transistors,” in 1989 GaAs IC Symp. Tech. Dig. (San Diego, CA), pp. 135–138.
    • (1989) 1989 GaAs IC Symp. Tech. Dig , pp. 135-138
    • Nottenburg, R.N.1
  • 7
    • 0025430935 scopus 로고
    • A model-based comparison of AlInAs/GaInAs and InP/GaInAs HBT's: A Monte Carlo study
    • May
    • R. Katoh and M. Kurata, “A model-based comparison of AlInAs/GaInAs and InP/GaInAs HBT's: A Monte Carlo study,” IEEE Trans. Electron Devices, vol. 37, no. 5, pp. 1245–1252, May 1990.
    • (1990) IEEE Trans. Electron Devices , vol.37 , Issue.5 , pp. 1245-1252
    • Katoh, R.1    Kurata, M.2
  • 8
    • 0024717505 scopus 로고
    • A high-speed, low-power divide-by-4 frequency divider implemented with AlInAs/GaInAs HBT's
    • Aug.
    • C. W. Farley et al., “A high-speed, low-power divide-by-4 frequency divider implemented with AlInAs/GaInAs HBT's,” IEEE Electron Device Lett., vol. 10, no. 8, pp. 377–379, Aug. 1989.
    • (1989) IEEE Electron Device Lett , vol.10 , Issue.8 , pp. 377-379
    • Farley, C.W.1
  • 9
    • 84941442921 scopus 로고
    • Emitter-coupled logic circuits implemented using InAlAs/InGaAs HBTs with improved emitter-collector breakdown voltage
    • (Santa Barbara, CA)
    • H. Yamada et al., “Emitter-coupled logic circuits implemented using InAlAs/InGaAs HBTs with improved emitter-collector breakdown voltage,” in 48th Annual Device Res. Conf. Tech. Dig. (Santa Barbara, CA), 1990, pp. IIIa-1.
    • (1990) 48th Annual Device Res. Conf. Tech. Dig , pp. IIIa-1
    • Yamada, H.1
  • 10
    • 0025671720 scopus 로고
    • Improved AlInAs/GaInAs HBT ICs for high speed circuits
    • (San Diego, CA), Mar.
    • J. F. Jensen et al., “Improved AlInAs/GaInAs HBT ICs for high speed circuits,” in SPIE Proc. High-Speed Electronics and Device Scaling, vol. 1288 (San Diego, CA), Mar. 17–21, 1990, pp. 57–68.
    • (1990) SPIE Proc. High-Speed Electronics and Device Scaling , vol.1288 , pp. 17-21
    • Jensen, J.F.1
  • 11
    • 0025496357 scopus 로고
    • High speed dual modulus dividers using AlInAs-GaInAs HBT IC technology
    • (New Orleans, LA)
    • J. F. Jensen et al., “High speed dual modulus dividers using AlInAs-GaInAs HBT IC technology,” in 1990 GaAs IC Symp. Tech. Dig. (New Orleans, LA), pp. 41–44.
    • (1990) 1990 GaAs IC Symp. Tech. Dig , pp. 41-44
    • Jensen, J.F.1
  • 12
    • 0024143549 scopus 로고
    • A wideband, low-power, high-sensitivity and small-size 5.5-GHz static frequency divider IC
    • (Minneapolis, MN), Sept.
    • I. Kipnis et al., “A wideband, low-power, high-sensitivity and small-size 5.5-GHz static frequency divider IC,” in Bipolar Circuits and Technology Meeting Tech. Dig. (Minneapolis, MN), Sept. 1988, pp. 150–152.
    • (1988) Bipolar Circuits and Technology Meeting Tech. Dig , pp. 150-152
    • Kipnis, I.1
  • 13
    • 0024092479 scopus 로고
    • Multigigahertz CMOS dual-modulus prescalar IC
    • Oct.
    • H. I. Cong et al., “Multigigahertz CMOS dual-modulus prescalar IC,” IEEE J. Solid-State Circuits, vol. 23, no. 5, pp. 1189–1194, Oct. 1988.
    • (1988) IEEE J. Solid-State Circuits , vol.23 , Issue.5 , pp. 1189-1194
    • Cong, H.I.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.