Submicron Area NbN/MgO/NbN Tunnel Junctions for SIS Mixer Applications

IEEE Transactions on Magnetics

Volumn 27, Issue 2, 1991, Pages 3192-3195

  LeDuc, H G ^a   Judas, A ^a   Cypher, S R ^a   Bumble, B ^a   Hunt, B D ^a   Stern, J A ^a  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC CIRCUITS, MIXER - MILLIMETER WAVES; SEMICONDUCTOR DEVICES - JUNCTIONS;

SIS MIXERS; SUBMICRON AREA MIXERS; TUNNEL JUNCTIONS;

SUPERCONDUCTING DEVICES;

EID: 0026119946     PISSN: 00189464     EISSN: 19410069     Source Type: Journal    
DOI: 10.1109/20.133890     Document Type: Article

References (6)

1. B.D. Hunt, H.G. LeDuc, S.R. Cypher, and J.A. Stern, “NbN/MgO/NbN Edge-Geometry Tunnel Junctions”, Appl. Phys. Lett. 55,81 (1989).
2. G.L. Kerber, J.E. Cooper, R.S. Morris, J.W. Spargo, and A.G. Toth, “NbN/MgO/NbN Josephson Tunnel Junctions Fabricated on Thin Under layers of MgO’, IEEE Trans. Magn. MAG-25,1294 (1989).
3. W.R. McGrath, J.A. Stern, H.H.S. Javadi, S.R. Cypher, B.D. Hunt, and H.G. LeDuc, “Performance of NbN Superconductive Tunnel Junctions as SIS Mixers at 205 GHz”, this journal.
4. Private communications J.W. Coburn, IBM Research Laboratory, San Jose, CA 95193.
5. H.G. LeDuc and B. Bumble, to be published.
6. Y. Gokan, M. Mukainaru, and N. Endo, “Uniform Polymer Coating for an Etch-Back Planarization Process Using Low Molecular Weight Polyrners”, J. Electrochem. Soc., 135, 1019 (1988).