24 Gbit/s regenerating demultiplexer IC in silicon bipolar technology

Electronics Letters

Volumn 27, Issue 6, 1991, Pages 502-504

  Hauenschild, J ^a   Rein, H M ^a   McFarland, W ^b   Pettengill, D ^b  

^a RUHR UNIVERSITY BOCHUM   (Germany)

^b HEWLETT PACKARD COMPANY   (United States)

Author keywords

Bipolar devices; Demultiplexers

Indexed keywords

LITHOGRAPHY; MULTIPLEXING EQUIPMENT; SEMICONDUCTING SILICON;

DEMULTIPLEXER IC;

INTEGRATED CIRCUITS;

EID: 0026118825     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19910316     Document Type: Article

References (10)

1. Rein, H.-M.: ‘Multi-gigabit-per-second silicon bipolar IC’s for future optical-fiber transmission systems’, IEEE J. Solid-State Circuits, 1988, SC-23, pp. 664–675
2. Rein, H.-M.: ‘Silicon bipolar integrated circuits for multi-Gbit/s lightwave communications’, IEEE J. Lightwave Technol., 1990, LT-8, pp. 1371–1378
3. Runge, K., et al.: ‘Submicron silicon bipolar master-slave D-type flip-flop for use as a 8 Gbit/s decision circuit and 11 2 Gbit/s demultiplexer’, Electron. Lett., 1989, 25, pp. 1346–1347
4. Hauenschild, J., Rein, H.-M., Weger, P., and Klose, H.: ‘10 Gbit/s monolithic integrated bipolar demultiplexer for optical-fibre transmission systems fabricated in BICMOS technology’, Electron. Lett., 1989, 25, pp. 782–783
5. Kuriyama, Y., et al: ‘15 GBPS MUX/DMUX implemented with AlGaAs/GaAs HBT’s’. IEEE GaAs IC Symp., San Diego, CA, September 1989
6. Hauenschild, J., Rein, H.-M., Mcfarland, W., Doernberg, J., and Pettengill, D.: ‘20 Gbit/s time-division multiplexer IC in silicon bipolar technology’, Electron. Lett., 1990, 26, pp. 1824–1825
7. Hauenschild, J., and Rein, H.-M.: ‘Influence of transmission-line interconnections between Gbit/s IC’s on time jitter and instabilities’, IEEE J. Solid-State Circuits, 1990, SC-25, pp. 763–766
8. Huang, W. M., et al.: ‘A high-speed bipolar technology featuring self-aligned single-poly base and submicrometer emitter contacts’, IEEE Electron Dev. Lett., 1990, ED-11, pp. 412–414
9. Rein, H.-M., and Hauenschild, J.: ‘Suitability of present silicon bipolar IC technologies for optical-fibre transmission rates about and above 10 Gbit/s’., I EE Proc. G, 1990, 137, pp. 251–260
10. Clawin, C., Langmann, U., and Bosch, B.: ‘Silicon bipolar decision circuit handling bit rates up to 5 Gbit/s’, J. Lightwave Technol., 1987, LT-5, pp. 537–541