A 55-V, 0.2-m Ω · cm2 Vertical Trench Power MOSFET

IEEE Electron Device Letters

Volumn 12, Issue 3, 1991, Pages 108-110

  Shenai, Krishna ^a  

^a GE GLOBAL RESEARCH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC MEASUREMENTS; SEMICONDUCTOR DEVICE MANUFACTURE - ETCHING;

SILICON TRENCH PROCESSING TECHNOLOGY; VERTICAL-TRENCH POWER MOSFET;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0026117912     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.75727     Document Type: Article

References (14)

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