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Volumn 12, Issue 3, 1991, Pages 137-139

Large-Area, 8-cm2 GaAs Solar Cells Fabricated from MBE Material

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE - GROWTH;

EID: 0026117909     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.75736     Document Type: Article
Times cited : (11)

References (18)
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  • 7
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    • GaAlAs/GaAs solar cells grown by molecular beam epitaxy: Material properties and device parameters
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    • Saletes, A.1
  • 8
    • 1342319748 scopus 로고
    • Efficient shallow-homojunction GaAs solar cells by molecular beam epitaxy
    • J. C. C. Fan, A. R. Calawa, R. L. Chapman, and G. Turner, “Efficient shallow-homojunction GaAs solar cells by molecular beam epitaxy,” Appl. Phys. Lett., vol. 35, no. 10, p. 804, 1979.
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  • 9
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  • 11
    • 4043055107 scopus 로고
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    • M. R. Melloch et al., “High-efficiency GaAs solar cells grown by molecular-beam epitaxy,” J. Vac. Sci. Technol. B. vol. 8, no. 2, p. 379, 1990.
    • (1990) J. Vac. Sci. Technol. B. vol. 8 , vol.8 , Issue.2 , pp. 379
    • Melloch, M.R.1
  • 12
    • 84939385793 scopus 로고
    • Recent advances in ultrahigh-speed HEMT LSI technology
    • M. Abe et al., “Recent advances in ultrahigh-speed HEMT LSI technology,” IEEE Trans. Electron Devices, vol. 36, no. 10, p. 2021, 1989.
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  • 13
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  • 16
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.