Emitter Ballasting Resistor Design for, and Current Handling Capability of AlGaAs/GaAs Power Heteroiunction Bipolar Transistors

IEEE Transactions on Electron Devices

Volumn 38, Issue 2, 1991, Pages 185-196

  Gao, Guang Bo ^a   Unlu, M Selim ^a   Morkoc, Hadis ^a   Blackburn, David L ^b  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

RESISTORS; SEMICONDUCTING ALUMINUM COMPOUNDS--APPLICATIONS; SEMICONDUCTING GALLIUM ARSENIDE--APPLICATIONS; SEMICONDUCTOR DEVICES--HETEROJUNCTIONS; TEMPERATURE MEASUREMENT;

CURRENT HANDLING CAPABILITY; EMITTER BALLASTING RESISTOR DESIGN; HETEROJUNCTION BIPOLAR TRANSISTOR (HBT); OPTIMAL BALLASTING; THERMAL CONDUCTIVITY;

TRANSISTORS, BIPOLAR;

EID: 0026108045     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.69894     Document Type: Article

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