Investigation of nitrogen incorporation into a-Si:H prepared by dc-magnetron sputtering

Journal of Non-Crystalline Solids

Volumn 127, Issue 2, 1991, Pages 165-173

  Druesedau, T ^a   Jaeger, St ^a   Fiedler, H ^a   Sobotta, H ^b   Riede, V ^b   Boettcher, R ^b   Witzmann, A ^c  

^a OTTO VON GUERICKE UNIVERSITY   (Germany)

^b UNIVERSITY OF LEIPZIG   (Germany)

^c FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

NITROGEN - ELECTRONIC PROPERTIES; PHOTOCONDUCTIVITY; SEMICONDUCTING FILMS - PREPARATION; SEMICONDUCTOR MATERIALS - DOPING; SPUTTERING;

MAGNETRON SPUTTERING; TAUC PLOT;

SEMICONDUCTING SILICON;

EID: 0026107516     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-3093(91)90139-W     Document Type: Article

References (42)

1. Photoelectric application of a-Si:H and related material-image devices
2. Enhancement of Photoconductivity in Magnetron-Sputtered a-Si:H Doped with Nitrogen
3. Wide Optical-Gap, Photoconductive a-SixN1-x:H
4. Anomalous Variations in Conductivity of a-Si: H with Nitrogen Doping
5. Electrical and optical properties of amorphous SixN1−x
6. ESR and IR studies on doped a-Si1 − xCx :H and a-Si1 − xNx:H films
7. Computer simulation of helium-induced forward-recoil proton spectra for hydrogen concentration determinations
8. X-ray photoelectron spectroscopy observations of argon-ion bombardment effects on phase separated structures such as SiNx alloys or Si/Si3N4 interfaces
9. Hydrogen Evolution from Amorphous Si-N Films
10. Electronic structure, defect states, and optical absorption of amorphous Si_{1-x}N_{x} [0≤x/(1-x)≤2]
11. Electronic structure of hydrogenated and unhydrogenated amorphous SiN_{x} (0≤x≤1.6): A photoemission study
12. The ordinary and generalized Meyer-Neldel rule in a-Si:H calculated by the statistical fermi level shift