Modeling of Minority-Carrier Surface Recombination Velocity at Low-High Junction of an n+-p-p+ Silicon Diode

IEEE Transactions on Electron Devices

Volumn 38, Issue 2, 1991, Pages 337-343

  Singh, S N ^a   Singh, P K ^a  

^a NATIONAL PHYSICAL LABORATORY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING SILICON--APPLICATIONS; SEMICONDUCTOR MATERIALS--CHARGE CARRIERS;

ACCUMULATION LAYER; DEPLETION LAYER; LOW-HIGH JUNCTION; MINORITY CARRIER SURFACE RECOMBINATION; POISSON'S EQUATION; SPACE CHARGE REGION (SCR);

SEMICONDUCTOR DIODES;

EID: 0026106780     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.69915     Document Type: Article

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