Leakage Mechanisms in the Heavily Doped Gated Diode Structures

IEEE Electron Device Letters

Volumn 12, Issue 2, 1991, Pages 74-76

  Han, Chul Hi ^a   Kim, Kwan ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FAULT CURRENTS - LEAKAGE CURRENTS; ELECTRONS - TUNNELING; PROBABILITY; SEMICONDUCTOR DEVICES, MOSFET; SEMICONDUCTOR DIODES - STRUCTURES;

DRAM STORAGE; GATED DIODE STRUCTURES; LEAKAGE CURRENT MODEL; POOLE-FRENKEL EFFECT; SHOCKLEY-READ-HALL GENERATION CURRENT; TRAP-ASSISTED TUNNELING;

INTEGRATED CIRCUITS, ULSI;

EID: 0026106496     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.75708     Document Type: Article

References (9)

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